热扩散率和压力传递对三维封装互连性能的影响研究

Jin-San Jung, H. Lee, Ji-Min Kim, Yong-Jin Park, Jin Yu, Y. Park, J. Lim, H. Choi, Sung-il Cho, Dong Wook Kim, Sang-ho An
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引用次数: 5

摘要

3D封装技术被认为是通过实现高I/O密度以及在给定封装尺寸的情况下提供最短的信号通道路径来提高系统性能的最佳候选技术之一。然而,除了热压缩(TC)键合之外,很难均匀控制键合厚度和精确对齐凸起以实现3D封装。此外,高芯片成本和TC键合可能的低生产率是阻止这种有吸引力的技术在大规模生产环境中流行的主要商业原因。为了解决这些众所周知的TC键合技术问题,提出了非导电薄膜,用于特别高的垂直堆叠,具有小凸距和最小芯片到芯片距离所需的封装,如高带宽存储器。在本文中,我们研究了关键的工艺参数,以了解如何优化粘接工艺,以确保高密度3D封装产品的卓越连接质量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Study of 3D Packaging Interconnection Performance Affected by Thermal Diffusivity and Pressure Transmission
3D packaging technology has been considered as one of the best candidates to improve the system performance by implementing high I/O density as well as providing shortest signal channel path with given package form factor. However, it is difficult to uniformly control the bonding thickness and the precisely align the bumps other than thermo compression (TC) bonding to enable 3D packaging. Moreover, high chip cost and possibly low productivity of TC bonding are main business reasons to prevent this attractive technology from prevailing the mass production environment. To address these well-known technical issues of TC bonding, non-conductive film are proposed for especially high vertical stack with small bump pitch and also minimum chip to chip distance required packages such as high bandwidth memory. In this article, we investigated key process parameters to understand how to optimize bonding process to ensure excellent joint quality for highly dense 3D packages products.
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