基于硫化物相变材料GeTe的在线射频SPST系列和并联开关

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI:10.1109/IMWS-AMP.2018.8457163

Tejinder Singh, R. Mansour

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引用次数: 26

摘要

本文报道了一种利用碲化锗(GeTe)串联和并联结构的紧凑型在线硫系射频(RF)相变材料(PCM)开关。相变是通过电隔离嵌入式微加热器实现的。RF-PCM开关的导通电阻为2.4欧姆，关断电容为8.5 fF。估计截止频率$(F_{\ maththrm {co}})$为7.8太赫兹，比最先进的RF CMOS开关高10倍。对RF-PCM系列和并联开关进行了仿真和测量，在dc - 26ghz频率范围内，通状态插入损耗分别小于0.3 dB和0.2 dB，关状态隔离分别高于20 dB和36 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Chalcogenide Phase Change Material GeTe Based Inline RF SPST Series and Shunt Switches

Compact inline chalcogenide radio-frequency (RF) phase-change material (PCM) switches utilizing germanium telluride (GeTe) in series and shunt configurations are reported in this paper. Phase transition in PCM has been achieved by electrically isolated embedded micro-heaters. RF-PCM switches presented exhibit ON-state resistance of 2.4 ohm and OFF-state capacitance of 8.5 fF. The estimated cut-off frequency $(F_{\mathrm{co}})$ is 7.8 THz, which is 10 times higher than state-of-the-art RF CMOS switches. The RF-PCM series and shunt switches are simulated and measured, demonstrating ON-state insertion loss less than 0.3 dB and 0.2 dB and OFF-state isolation higher than 20 dB and 36 dB over DC–26 GHz frequency range respectively.

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来源期刊

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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