Highly-Sensitive FET-based Sensor via Heterogeneous Selective-Assembling Integration of Porphyrin and Silicon Nanowires

In this paper, we proposed and fabricated a novel heterogeneous porphyrin/silicon nanowire transistor-based sensor using CMOS process technology. With the difference in hydrophobicity of Si3N4 and SiO2, the enrichment of porphyrin molecules on silicon nanowires was achieved, and the device showed highly sensitive photo-sensing even under very low illumination power $(\Delta \mathrm{V}_{\mathrm{t}}=3.32\mathrm{V}$ @11.3µW/cm2), great dynamic photo-memory characteristic $(\Delta \mathrm{V}_{\mathrm{t}}=31.3\mathrm{V}$ @ programming/erasing time of 10s) and excellent temperature sensing $(\Delta \mathrm{V}_{\mathrm{t}}=13.6\mathrm{V}$ @ 90°C temperature range). Those performances make the devices applicable to be used in applications of sensitive and smart non-memory light sensing and reliable temperature sensing.