ALD MnOx扩散阻挡层的沉积行为及其对衬底的依赖性

2013 IEEE International Interconnect Technology Conference - IITC Pub Date : 2013-06-13 DOI:10.1109/IITC.2013.6615566

Kenji Matsumoto, Kaoru Maekawa, H. Nagai, Junichi Koike

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引用次数: 5

摘要

我们研究了应用ALD方法在MnOx中形成Cu扩散阻挡层的可能性，试图开发一种不受衬底中吸收水影响的沉积工艺。用(EtCp)2Mn和H2O进行ALD生成的MnOx具有以下特点:(1)通过改变ALD循环次数控制MnOx层厚度的能力。(2)低k介电材料表面改性生成ALD-MnOx的能力。(3) Cu/ALD-MnOx/SiOCH结构附着力好，断裂韧性为0.3 MPa·m1/2。(4)厚度在1 nm以上时，具有良好的扩散阻挡性能。(5)最大限度地减少Cu表面MnOx形成时的通孔电阻增加。

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Deposition behavior and substrate dependency of ALD MnOx diffusion barrier layer

We investigated the possibility of applying an ALD method to form a Cu diffusion barrier layer of MnOx in an attempt to develop a deposition process which would not be influenced by absorbed water in a substrate. The MnOx formed by ALD using (EtCp)2Mn and H2O had the following features. (1) Capability of thickness control of the MnOx layer by changing the ALD cycle number. (2) Capability of the ALD-MnOx formation on low-k dielectrics by surface modification. (3) Good adhesion of the Cu/ALD-MnOx/SiOCH structure showing a fracture toughness of 0.3 MPa·m1/2. (4) Good diffusion barrier property for the thickness of over 1 nm. (5) Minimizing via resistance increase accompanied by the formation of MnOx on Cu.

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2013 IEEE International Interconnect Technology Conference - IITC

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