演示用于评估电介质和金属屏障薄膜的侧壁电容器

Kevin L. Lin, C. Carver, R. Chebiam, J. Clarke, Jacob Faber, M. Harmes, T. Indukuri, C. Jezewski, M. Kobrinsky, B. Krist, Narendra V. Lakamraju, H. Lang, A. Myers, J. Plombon, K. Singh, H. Yoo
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引用次数: 1

摘要

为了模拟金属屏障和介质在一个整体结构中的加工条件,研制了一种侧壁平面电容器(SW CAP)车辆。对于已知的低k介电介质上铜的钽屏障,SW CAP TDDB与在集成车辆上测量的TDDB相似。SW CAP结果可用于比较不同介质系统的电气可靠性,并可用于确定铜金属屏障的物理连续性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Demonstration of a sidewall capacitor to evaluate dielectrics and metal barrier thin films
A sidewall planar capacitor (SW CAP) vehicle is developed to closely simulate processing conditions for metal barrier and dielectric in an integrated structure. For a known tantalum barrier for copper on a low-K dielectric, SW CAP TDDB is similar to those measured on an integrated vehicle. SW CAP results are useful for comparing electrical reliability of different dielectric systems, and effective in determining physical continuity of copper metal barriers.
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