{"title":"铜互连中的交流和脉冲-直流应力电迁移失效机制","authors":"M. Lin, A. Oates","doi":"10.1109/IITC.2013.6615556","DOIUrl":null,"url":null,"abstract":"The effects of AC and pulsed-DC (PDC) waveforms on electromigration failure distributions in Cu / low-k interconnects are examined. No failures are observed with a 1MHz pure AC stress, consistent with average current density controlled kinetics and complete recovery of damage during current reversal. Failure distributions with PDC stress are consistent with a degradation process that is determined by average current density and void growth kinetics.","PeriodicalId":6377,"journal":{"name":"2013 IEEE International Interconnect Technology Conference - IITC","volume":"12 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"AC and pulsed-DC stress electromigration failure mechanisms in Cu interconnects\",\"authors\":\"M. Lin, A. Oates\",\"doi\":\"10.1109/IITC.2013.6615556\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effects of AC and pulsed-DC (PDC) waveforms on electromigration failure distributions in Cu / low-k interconnects are examined. No failures are observed with a 1MHz pure AC stress, consistent with average current density controlled kinetics and complete recovery of damage during current reversal. Failure distributions with PDC stress are consistent with a degradation process that is determined by average current density and void growth kinetics.\",\"PeriodicalId\":6377,\"journal\":{\"name\":\"2013 IEEE International Interconnect Technology Conference - IITC\",\"volume\":\"12 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Interconnect Technology Conference - IITC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2013.6615556\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Interconnect Technology Conference - IITC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2013.6615556","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
AC and pulsed-DC stress electromigration failure mechanisms in Cu interconnects
The effects of AC and pulsed-DC (PDC) waveforms on electromigration failure distributions in Cu / low-k interconnects are examined. No failures are observed with a 1MHz pure AC stress, consistent with average current density controlled kinetics and complete recovery of damage during current reversal. Failure distributions with PDC stress are consistent with a degradation process that is determined by average current density and void growth kinetics.
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