R. Nebashi, N. Banno, M. Miyamura, Y. Tsuji, A. Morioka, X. Bai, K. Okamoto, N. Iguchi, H. Numata, H. Hada, T. Sugibayashi, T. Sakamoto, M. Tada
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High-Density and Fault-Tolerant Cu Atom Switch Technology Toward 28nm-node Nonvolatile Programmable Logic
Key device/circuit technologies for realizing a 28nm-node atom switch programmable logic (AS-PL) have been developed. An advanced polymer solid-electrolyte (PSE) reduces set voltage down to 1.6 V while ensuring ON-state and OFF-state reliabilities under current and voltage stress at 125°C. A fine-grain redundancy in a cross-bar array also contributes to reduce supply voltage by 6%. A routing-based wear leveling improves programming cycles by nine times. The developed technologies allow us to design the 28nm-node AS-PL with a 32% higher performance and 11% lower power.
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