J. Rieh, B. Jagannathan, H. Chen, K. Schonenberg, D. Angell, A. Chinthakindi, J. Florkey, F. Golan, D. Greenberg, S. Jeng, M. Khater, F. Pagette, C. Schnabel, Peter Andrew Smith, A. Stricker, K. Vaed, R. Volant, D. Ahlgren, G. Freeman, K. Stein, S. Subbanna
{"title":"截止频率为350 GHz的SiGe hbt","authors":"J. Rieh, B. Jagannathan, H. Chen, K. Schonenberg, D. Angell, A. Chinthakindi, J. Florkey, F. Golan, D. Greenberg, S. Jeng, M. Khater, F. Pagette, C. Schnabel, Peter Andrew Smith, A. Stricker, K. Vaed, R. Volant, D. Ahlgren, G. Freeman, K. Stein, S. Subbanna","doi":"10.1109/IEDM.2002.1175952","DOIUrl":null,"url":null,"abstract":"This work reports on SiGe HBTs with f/sub T/ of 350 GHz. This is the highest reported f/sub T/ for any Si-based transistor as well as any bipolar transistor. Associated f/sub max/ is 170 GHz, and BV/sub CEO/ and BV/sub CBO/ are measured to be 1.4 V and 5.0 V, respectively. Also achieved was the simultaneous optimization of f/sub T/ and f/sub max/ resulting in 270 GHz and 260 GHz, with BV/sub CEO/ and BV/sub CBO/ of 1.6 V and 5.5 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f/sub T/ and f/sub max/ values are also discussed.","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"25 1","pages":"771-774"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"194","resultStr":"{\"title\":\"SiGe HBTs with cut-off frequency of 350 GHz\",\"authors\":\"J. Rieh, B. Jagannathan, H. Chen, K. Schonenberg, D. Angell, A. Chinthakindi, J. Florkey, F. Golan, D. Greenberg, S. Jeng, M. Khater, F. Pagette, C. Schnabel, Peter Andrew Smith, A. Stricker, K. Vaed, R. Volant, D. Ahlgren, G. Freeman, K. Stein, S. Subbanna\",\"doi\":\"10.1109/IEDM.2002.1175952\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work reports on SiGe HBTs with f/sub T/ of 350 GHz. This is the highest reported f/sub T/ for any Si-based transistor as well as any bipolar transistor. Associated f/sub max/ is 170 GHz, and BV/sub CEO/ and BV/sub CBO/ are measured to be 1.4 V and 5.0 V, respectively. Also achieved was the simultaneous optimization of f/sub T/ and f/sub max/ resulting in 270 GHz and 260 GHz, with BV/sub CEO/ and BV/sub CBO/ of 1.6 V and 5.5 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f/sub T/ and f/sub max/ values are also discussed.\",\"PeriodicalId\":74909,\"journal\":{\"name\":\"Technical digest. International Electron Devices Meeting\",\"volume\":\"25 1\",\"pages\":\"771-774\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"194\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical digest. International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2002.1175952\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical digest. International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2002.1175952","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This work reports on SiGe HBTs with f/sub T/ of 350 GHz. This is the highest reported f/sub T/ for any Si-based transistor as well as any bipolar transistor. Associated f/sub max/ is 170 GHz, and BV/sub CEO/ and BV/sub CBO/ are measured to be 1.4 V and 5.0 V, respectively. Also achieved was the simultaneous optimization of f/sub T/ and f/sub max/ resulting in 270 GHz and 260 GHz, with BV/sub CEO/ and BV/sub CBO/ of 1.6 V and 5.5 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f/sub T/ and f/sub max/ values are also discussed.
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