晶格不匹配InGaAs/GaAs衬底上InAs量子点的完整形成序列

2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI:10.1109/INEC.2010.5424719

S. Kanjanachuchai, T. Limwongse

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引用次数: 0

摘要

在晶格不匹配的InGaAs交叉舱口衬底上，确定了InAs量子点的完整形成序列。InAs量子点依次在以下位置形成:位错自由端、位错t截面、位错交点、位错[1-10]线、位错[110]线、位错平坦区。这些位置的不同表面能导致不同有效厚度和时间的量子点形成。

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Complete formation sequence of InAs quantum dots on lattice-mismatched InGaAs/GaAs substrates

The complete formation sequence of InAs quantum dots (QDs) on lattice-mismatched InGaAs cross-hatch substrate has been identified. The InAs QDs sequentially form at the following locations: the dislocation free end, the dislocation T-section, the dislocation intersection, the [1–10] dislocation line, the [110] dislocation line and the flat area. Different surface energies at these locations give rise to QD formation at different effective thicknesses and times.

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2010 3rd International Nanoelectronics Conference (INEC)

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