应变对载流子迁移率的影响

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI:10.1109/IIT.2014.6940012

S. Prussin, A. Joshi

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引用次数: 0

摘要

先进的设备需要了解载流子浓度，迁移率和电阻率曲线以及应变的影响。Active Layer parametric, Inc.的差分霍尔效应法(DHE)代表了一种直接测量这些参数以及高掺杂浓度和IV类杂质对应变的影响的技术。

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The effect of strain on carrier mobility

Advanced devices require knowledge of carrier concentration, mobility and resistivity profiles as well as the effects of strain. Active Layer Parametrics, Inc.'s Differential Hall Effect Method (DHE) represents a technique to directly measure these parameters as well as the effects of strain from high dopant concentrations and group IV impurities.

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2014 20th International Conference on Ion Implantation Technology (IIT)

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