bbte3拓扑绝缘体单晶的合成及结构表征

Indu Rajput, A. Lakhani
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引用次数: 1

摘要

本文报道了拓扑绝缘体bbte3单晶的合成和结构表征。在Bi2Te3中,由于Te空位诱导的电子型体载流子,费米能级(EF)位于体导带。而在Sb2Te3中,由于Sb-Te反位缺陷引起的空穴型体载流子,费米能级位于体价带。由于体态的贡献过大,通过输运实验很难观察到拓扑性质。通过这两种化合物的混合,铋(Bi)与锑(Sb)的比例可以将费米能级(EF)从体导带转移到体价带,为实现具有绝缘体的理想拓扑绝缘体提供了机会。在(Bi1-xSbx)2Te3中,当Bi:Sb比为1:1时,费米能级位于通过输运测量探测拓扑表面态的体隙中。我们用改进的Bridgman法生长出了高质量的BiSbTe3单晶。x射线衍射分析、扫描电子显微镜和能量色散电子能谱证实了所制备晶体的单晶形成、相纯度和化学计量原子比。晶体的电阻率测量显示了晶体的金属性质和高质量。本文报道了拓扑绝缘体bbte3单晶的合成和结构表征。在Bi2Te3中,由于Te空位诱导的电子型体载流子,费米能级(EF)位于体导带。而在Sb2Te3中,由于Sb-Te反位缺陷引起的空穴型体载流子,费米能级位于体价带。由于体态的贡献过大,通过输运实验很难观察到拓扑性质。通过这两种化合物的混合,铋(Bi)与锑(Sb)的比例可以将费米能级(EF)从体导带转移到体价带,为实现具有绝缘体的理想拓扑绝缘体提供了机会。在(Bi1-xSbx)2Te3中,当Bi:Sb比为1:1时,费米能级位于通过输运测量探测拓扑表面态的体隙中。我们用改进的Bridgman法生长出了高质量的BiSbTe3单晶。x射线衍射分析,扫描电子…
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis and structural characterization of BiSbTe3 topological insulator single crystal
We report the synthesis and structural characterization of the topological insulator BiSbTe3 single crystal. In Bi2Te3, the Fermi level (EF) lies in the bulk conduction band due to electron type bulk carriers induced by Te vacancies. While in Sb2Te3, Fermi level lies in the bulk valance band due to hole type bulk carriers induced by Sb-Te antisite defects. It is difficult to observe the topological properties by transport experiments due to excess contribution from bulk states. By mixing these two compounds, the ratio of bismuth (Bi) to antimony (Sb) can shift the Fermi level (EF) from bulk conduction band to bulk valance band providing an opportunity to realize ideal topological insulator with insulating bulk. In (Bi1-xSbx)2Te3, at Bi:Sb ratio of 1:1, the Fermi level lies in the bulk gap which is ideal for probing topological surface states through transport measurements. We have grown good quality single crystals of BiSbTe3 using modified Bridgman method. The X-ray diffraction analysis, Scanning electron microscopy and Energy dispersive electron spectroscopy confirms the single crystal formation, phase purity and stoichiometric atomic ratio of the prepared crystal. The electrical resistivity measurement of the crystal shows the metallic nature and high quality of the grown crystal.We report the synthesis and structural characterization of the topological insulator BiSbTe3 single crystal. In Bi2Te3, the Fermi level (EF) lies in the bulk conduction band due to electron type bulk carriers induced by Te vacancies. While in Sb2Te3, Fermi level lies in the bulk valance band due to hole type bulk carriers induced by Sb-Te antisite defects. It is difficult to observe the topological properties by transport experiments due to excess contribution from bulk states. By mixing these two compounds, the ratio of bismuth (Bi) to antimony (Sb) can shift the Fermi level (EF) from bulk conduction band to bulk valance band providing an opportunity to realize ideal topological insulator with insulating bulk. In (Bi1-xSbx)2Te3, at Bi:Sb ratio of 1:1, the Fermi level lies in the bulk gap which is ideal for probing topological surface states through transport measurements. We have grown good quality single crystals of BiSbTe3 using modified Bridgman method. The X-ray diffraction analysis, Scanning electro...
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