c轴倾斜ScAlN薄膜的巨剪切模机电耦合系数k15

2010 IEEE International Ultrasonics Symposium Pub Date : 2010-12-01 DOI:10.1109/ULTSYM.2010.5935791

T. Yanagitani, K. Arakawa, K. Kano, Akihiko Teshigahara, M. Akiyama

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引用次数: 47

摘要

在c轴33°倾斜的ScAlN薄膜中发现巨剪切模式机电耦合系数k15′为0.32 (k152= 10%)。即使在600℃的高温下也能观察到较高的k15值。与未掺杂AlN晶体相比，ScAlN薄膜中的TCF值变差。剪切模式ScAlN薄膜应该是高温下液体SH-SAW和FBAR传感器的良好候选者。

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Giant shear mode electromechanical coupling coefficient k15 in c-axis tilted ScAlN films

Giant shear mode electromechanical coupling coeficient k15' of 0.32 (k15²=10 %) were found in the c-axis 33° tilted ScAlN films. High k15 values were observed even in the high temperature of 600 °C. TCF values were deteriorated in ScAlN film compared with non-doped AlN crystal. Shear mode ScAlN films should be a good candidate for liquid SH-SAW and FBAR sensors in the high temperature.

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2010 IEEE International Ultrasonics Symposium

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