{"title":"金属硅化物纳米结构的合成及其电学性质","authors":"P. Yeh, C. Tsai","doi":"10.1109/INEC.2010.5425047","DOIUrl":null,"url":null,"abstract":"Metal silicide nanostructures have been synthesized by spontaneous chemical vapor transport and reaction method. The temperature and the vapor flow rate were shown to critically influence the growth of nanostructures. Various phases and morphologies, such as single-stem nanowires, three-dimensional nanowires networks, and aloe-like nanowires have been synthesized. Very low turn-on field (1.42 V/µm) and good conductance in field-emission and electrical property measurements indicates that metal-silicide nanowires is potentially useful.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Synthesis and electrical properties of the metal-silicide nanostructures\",\"authors\":\"P. Yeh, C. Tsai\",\"doi\":\"10.1109/INEC.2010.5425047\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Metal silicide nanostructures have been synthesized by spontaneous chemical vapor transport and reaction method. The temperature and the vapor flow rate were shown to critically influence the growth of nanostructures. Various phases and morphologies, such as single-stem nanowires, three-dimensional nanowires networks, and aloe-like nanowires have been synthesized. Very low turn-on field (1.42 V/µm) and good conductance in field-emission and electrical property measurements indicates that metal-silicide nanowires is potentially useful.\",\"PeriodicalId\":6390,\"journal\":{\"name\":\"2010 3rd International Nanoelectronics Conference (INEC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-03-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 3rd International Nanoelectronics Conference (INEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INEC.2010.5425047\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 3rd International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2010.5425047","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Synthesis and electrical properties of the metal-silicide nanostructures
Metal silicide nanostructures have been synthesized by spontaneous chemical vapor transport and reaction method. The temperature and the vapor flow rate were shown to critically influence the growth of nanostructures. Various phases and morphologies, such as single-stem nanowires, three-dimensional nanowires networks, and aloe-like nanowires have been synthesized. Very low turn-on field (1.42 V/µm) and good conductance in field-emission and electrical property measurements indicates that metal-silicide nanowires is potentially useful.
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