SrTiO3和LaAlO3衬底上La0.6Sr0.2Mn1.2O3薄膜的磁输运特性

2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI:10.1109/OMEE.2012.6464771

Alexandr Tovstolytkin, T. Polek, A. Matviyenko, M. Zakharenko, M. Semen'ko, A. Pashchenko

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引用次数: 0

摘要

研究了磁控溅射法在SrTiO3(001)和LaAlO3(001)单晶衬底上沉积La0.6Sr0.2Mn1.2O3薄膜的电阻和磁阻性能。给出了薄膜厚度从500 nm减小到12.5 nm时电阻率、磁电阻和居里温度变化的特征特征。证明了靠近基板的薄应变层的关键作用。计算了沉积在不同基底上的薄膜的应变层的临界厚度。

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Thickness-dependent magnetotransport properties of La0.6Sr0.2Mn1.2O3 films on SrTiO3 and LaAlO3 substrates

Electric and magnetoresistive properties of La0.6Sr0.2Mn1.2O3 films deposited on SrTiO3 (001) and LaAlO3 (001) single crystalline substrates by magnetron sputtering have been studied. Characteristic features of the evolution of resistivity, magnetoresistance and Curie temperature upon the decrease of film thickness from 500 to 12.5 nm are specified. A key role of a thin strained layer adjacent to the substrate is demonstrated. The critical thicknesses of the strained layer are calculated for the films deposited on different substrates.

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2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)

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