Y. Ejiri, Shinichirou Sukata, Masaya Toba, K. Urashima, M. Yonekura, Takaaki Noudou, Y. Kurihara, H. Masuda
{"title":"用于模压互连器件的CU浆料","authors":"Y. Ejiri, Shinichirou Sukata, Masaya Toba, K. Urashima, M. Yonekura, Takaaki Noudou, Y. Kurihara, H. Masuda","doi":"10.23919/PANPACIFIC.2019.8696671","DOIUrl":null,"url":null,"abstract":"Cu particles with an average particle size of 130 nm were found to be suitable for low-temperature metallization. Cu wirings with line/space $(L/S) = 150~\\mu m/ 150~\\mu m$ and $L/S= 150~\\mu m/100~\\mu m$ were formed by screen printing and aerosol jet printing, respectively. The shear strength of the Cu wiring that was covered by the SnBi solder including epoxy resin and liquid-crystalline polymer substrate was 7 MPa; the shear strength was maintained even after a high-temperature storage test (125 °C for 200 h). The developed Cu paste could be used as a via connection material, and employed for the fabrication of Cu wiring on two-dimensional and three-dimensional substrates.","PeriodicalId":6747,"journal":{"name":"2019 Pan Pacific Microelectronics Symposium (Pan Pacific)","volume":"150 1","pages":"1-10"},"PeriodicalIF":0.0000,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"CU Paste for Molded Interconnect Devices\",\"authors\":\"Y. Ejiri, Shinichirou Sukata, Masaya Toba, K. Urashima, M. Yonekura, Takaaki Noudou, Y. Kurihara, H. Masuda\",\"doi\":\"10.23919/PANPACIFIC.2019.8696671\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Cu particles with an average particle size of 130 nm were found to be suitable for low-temperature metallization. Cu wirings with line/space $(L/S) = 150~\\\\mu m/ 150~\\\\mu m$ and $L/S= 150~\\\\mu m/100~\\\\mu m$ were formed by screen printing and aerosol jet printing, respectively. The shear strength of the Cu wiring that was covered by the SnBi solder including epoxy resin and liquid-crystalline polymer substrate was 7 MPa; the shear strength was maintained even after a high-temperature storage test (125 °C for 200 h). The developed Cu paste could be used as a via connection material, and employed for the fabrication of Cu wiring on two-dimensional and three-dimensional substrates.\",\"PeriodicalId\":6747,\"journal\":{\"name\":\"2019 Pan Pacific Microelectronics Symposium (Pan Pacific)\",\"volume\":\"150 1\",\"pages\":\"1-10\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Pan Pacific Microelectronics Symposium (Pan Pacific)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/PANPACIFIC.2019.8696671\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Pan Pacific Microelectronics Symposium (Pan Pacific)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/PANPACIFIC.2019.8696671","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Cu particles with an average particle size of 130 nm were found to be suitable for low-temperature metallization. Cu wirings with line/space $(L/S) = 150~\mu m/ 150~\mu m$ and $L/S= 150~\mu m/100~\mu m$ were formed by screen printing and aerosol jet printing, respectively. The shear strength of the Cu wiring that was covered by the SnBi solder including epoxy resin and liquid-crystalline polymer substrate was 7 MPa; the shear strength was maintained even after a high-temperature storage test (125 °C for 200 h). The developed Cu paste could be used as a via connection material, and employed for the fabrication of Cu wiring on two-dimensional and three-dimensional substrates.