用于模压互连器件的CU浆料

Y. Ejiri, Shinichirou Sukata, Masaya Toba, K. Urashima, M. Yonekura, Takaaki Noudou, Y. Kurihara, H. Masuda
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引用次数: 0

摘要

发现平均粒径为130 nm的Cu颗粒适合低温金属化。采用丝网印刷和气溶胶喷射印刷分别形成线间距$(L/S) = 150~\mu m/ 150~\mu m$和$L/S= 150~\mu m/100~\mu m$的铜线。含环氧树脂和液晶聚合物衬底的SnBi焊料覆盖Cu导线的抗剪强度为7 MPa;经高温贮存试验(125°C, 200 h)后,其抗剪强度仍保持不变。所制备的Cu膏体可作为通孔连接材料,用于二维和三维基底上的Cu布线。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CU Paste for Molded Interconnect Devices
Cu particles with an average particle size of 130 nm were found to be suitable for low-temperature metallization. Cu wirings with line/space $(L/S) = 150~\mu m/ 150~\mu m$ and $L/S= 150~\mu m/100~\mu m$ were formed by screen printing and aerosol jet printing, respectively. The shear strength of the Cu wiring that was covered by the SnBi solder including epoxy resin and liquid-crystalline polymer substrate was 7 MPa; the shear strength was maintained even after a high-temperature storage test (125 °C for 200 h). The developed Cu paste could be used as a via connection material, and employed for the fabrication of Cu wiring on two-dimensional and three-dimensional substrates.
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