硅中间体细间距互连的紧凑建模与优化

Vachan Kumar, Li Zheng, M. Bakir, A. Naeemi
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引用次数: 3

摘要

本文提出了硅中间层互连技术的第一个优化方法。这些细间距互连的尺寸大约是几微米,因为它们既不能被视为片上RC互连,也不能被视为传统的片外互连。3D提取工具可以提供准确的电路参数估计,但它们被证明是非常缓慢和繁琐的设计空间探索和优化。因此,本文建立的细间距互连的频率相关电阻分析模型对于有效地优化这些互连是至关重要的。对于互连尺寸和感兴趣的频率范围,模型中的误差小于15%。然后,开发的分析模型用于优化数据速率和横截面尺寸,以最大化带宽密度,同时最小化每比特能量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Compact modeling and optimization of fine-pitch interconnects for silicon interposers
This paper presents the first optimization methodology for silicon interposer interconnect technology. The dimensions of these fine-pitch interconnects are roughly a few microns, because of which they can neither be treated as on-chip RC interconnects, nor as conventional off-chip interconnects. 3D extraction tools can provide an accurate estimate of the circuit parameters, but they prove to be very slow and tedious for design space exploration and optimization. Thus, the novel analytical models developed here for the frequency dependent resistance of fine-pitch interconnects are essential to efficiently optimize these interconnects. The error in the model is shown to be less than 15% for interconnect dimensions and frequency range of interest. The analytical models developed are then used to optimize the data-rate and cross-sectional dimensions to maximize the bandwidth-density and minimize the energy-per-bit, simultaneously.
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