未来1T1C FRAM技术为高可靠性，高密度FRAM

Technical digest. International Electron Devices Meeting Pub Date : 2002-12-08 DOI:10.1109/IEDM.2002.1175900

S.Y. Lee, K. Kim

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引用次数: 15

摘要

介绍了最近实现0.25 /spl mu/m/15F2单元的32mb FRAM技术，并提出了未来高可靠、高密度FRAM的关键集成技术。无蚀刻电容器技术和MOCVD PZT技术是实现未来高可靠、密度超过32mb的FRAM的有前途的解决方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Future 1T1C FRAM technologies for highly reliable, high density FRAM

Recent 32 Mb FRAM technologies realizing 0.25 /spl mu/m/15F2 cell are introduced and key integration technologies for future highly reliable, high density FRAM are suggested. Etchless capacitor technology and MOCVD PZT technology are the promising solutions for realizing future highly reliable, high density FRAM beyond 32 Mb density.

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来源期刊

Technical digest. International Electron Devices Meeting

CiteScore

4.50

自引率

0.00%

发文量