电沉积金/锰氧化物作为纳米超级电容器

Y. Hu, Jiun-Shing Liu
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引用次数: 0

摘要

在本研究中,采用高锰酸钾和氯化金溶液在ITO衬底上电沉积了金/锰氧化物薄膜。采用恒电位法(0.7V vs .开路)沉积200s。采用扫描电镜(SEM)对膜的形貌和微观结构进行了观察。薄膜厚度约为30 ~ 100nm,由MnO2纳米颗粒和Au组成。并用x射线光电子能谱(XPS)研究了离子的态。这种纳米结构的薄膜使得电容比传统的薄膜超级电容器高得多。这是由于加入Au降低了纳米超级电容器的阻抗。在本研究中,质量分数为0.2wt%的二氧化锰薄膜的电容和功率是纯二氧化锰的三倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrodeposited the gold/manganese oxides as nano supercapacitor
In this study, the nano-supercapacitors were electrodeposited the gold/manganese oxides thin film with potassium permanganate and gold chloride solution on ITO substrate. It was deposited for 200s by potentiostatic method (0.7V v.s. open circuit). The morphology and the microstructure of the films were examined by SEM (scan electron microscopy). The thickness of the thin films was about 30∼100nm and the thin films composed of MnO2 nano particles with Au. And the states of the ions were investigated by X-ray photoelectron spectroscopy (XPS). Such nano structure of the thin film contributes to much higher capacitance than traditional thin film supercapacitors. This is attributed to the lowering of impedance of the nano-supercapacitor by adding Au. In this study, the film with 0.2wt% god has trice capacitance and power than pure MnO2.
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