InBN and GaBN graded gap Gunn diodes at different BN distribution

The usage of graded-gap semiconductors can increase the efficiency and output power of Gunn generators. The energy gap between the valleys in InBN and GaBN compounds, unlike other ternary semiconductor nitrides, can be reduced to zero. This gives the opportunity to find the optimal distribution of the BN component in graded gap compounds for Gunn diodes. In this paper we present the results of numerical experiments on the oscillation generation in the range from 300 to 700 GHz using the n+-n-n+ Gunn diodes based on InBN and GaBN graded gap semiconductor compounds at different BN distribution. We have estimated the cutoff frequency of mentioned diodes. For the efficiency we have found out that at optimal BN distribution graded-gap semiconductor InBN and GaBN Gunn diodes exceed GaN and InN diodes in more than two times. We also have found out that power consumption of graded-gap InBN and GaBN diodes is 11÷19% less the power consumption of InN and GaN diodes.