半导体微腔中的腔极化子形成和弛豫动力学

IF 1 Q4 QUANTUM SCIENCE & TECHNOLOGY

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI:10.1364/qo.1997.qthb.3

J. Berger, S. Hallstein, W. Rühle, O. Lyngnes, G. Khitrova, H. Gibbs, M. Kira, F. Jahnke, S. W. Koch

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引用次数: 0

摘要

半导体微腔具有重要的物理意义，因为它们能够显著地改变固体的发射特性。特别令人感兴趣的是强耦合机制，其特点是空腔-激子耦合在不可逆衰变机制中占主导地位。自从在半导体微腔中首次观察到正模分裂以来，这一机制一直是大量活动的焦点最近的工作已经阐明了在线性2和非线性3,4,5体制下的腔极化子发射特性。

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Cavity-Polariton Formation and Relaxation Dynamics in Semiconductor Microcavities

Semiconductor microcavities are of inherent physical importance for their ability to dramatically alter the emission properties of solid states. Of particular interest is the strong coupling regime, characterized by a cavity-exciton coupling which dominates over irreversible decay mechanisms. This regime has been the focus of abundant activity since the first observation of the normal mode splitting in a semiconductor microcavity.1 Recent work has elucidated cavity polariton emission properties in both the linear2 and nonlinear3,4,5 regimes.

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来源期刊

Semiconductor Physics Quantum Electronics & Optoelectronics QUANTUM SCIENCE & TECHNOLOGY-

CiteScore

1.80

自引率

22.20%

发文量

审稿时长

15 weeks