一种区域有效的可编程前端神经信号采集放大器

Gopabandhu Hota, Hardik Agrawal, M. Sharad
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引用次数: 0

摘要

神经信号的获取和分析极大地改变了我们对大脑的理解。这些神经植入物要求尽可能小,这样它们对正常身体功能的侵入性最小。该神经信号的频率分量在0.1-10KHz,幅值在10-100µV范围内,非常小,容易被外界噪声源扭曲。这需要一个非常面积高效和低噪声的前端放大器(FEA)。低电压和低功耗是确保安全植入和延长电池寿命的另一个关键要求。考虑到所有这些要求,我们提出了一种可编程区域高效和低噪声的有限元设计,以及手动和基于sar的增益调谐和偏移抵消方案,该方案对任何温度和工艺变化都具有鲁棒性。所设计的有限元分析的最小面积为0.05 mm2,显示出基于开关电容和闭环前端放大器的高面积效率。仿真得到的最大电压增益为87.6 dB,输入参考噪声密度为20 nV/√Hz,功耗为43.2µW,电源为1.8V,噪声效率(NEF)系数为1.84。该方案使用7位晶体管组,具有高达30 mV的偏移抵消能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An Area Effective Programmable Front-end Amplifier for Neural Signal Acquisition
Acquisition and analysis of neural signals have greatly changed our understanding of the brain. These neural implants are required to be as small as possible so that they are least invasive to normal body functioning. The neural signal contains frequency components from 0.1-10KHz and amplitude in 10-100µV range, which is very small and can be easily distorted by external noise sources. This demands a very area-efficient and low-noise Front-End Amplifier (FEA). Low voltage supply and low power dissipation is another critical requirement to ensure safe implantation and prolonged battery life. Keeping all these requirements in mind, we propose a programmable area efficient and low-noise FEA design along with both manual and SAR-based Gain Tuning and Offset Cancellation Scheme which is robust to any temperature and process variations. The designed FEA occupies a minimal area of 0.05 mm2 which shows great area efficiency w.r.t. switch-capacitor based and closed-loop frontend amplifiers. Obtained maximum voltage gain from Simulation is 87.6 dB, Input-referred noise density is 20 nV/√Hz, and the power consumption is 43.2µW at 1.8V power supply with a Noise Efficiency(NEF) factor of 1.84. The proposed scheme has offset cancellation capacity up to 30 mV using the 7 bits of transistor bank.
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