光电镀液中硫酸铜(CuSO4.5H2O)浓度和pH对电沉积氧化铜薄膜带隙的影响

Md. Anisul Islam, Sheikh Jaber Nurani, Md Adnan Karim, Abu Sadat Md Sayem Rahman, Md Abdul Halim
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引用次数: 1

摘要

本研究在含有CuSO4.5H2O、3M乳酸和NaOH的电解液中,采用电沉积工艺在铜板上沉积氧化铜薄膜。在不同pH值和不同CuSO4.5H2O浓度下电沉积氧化铜膜,通过紫外-可见吸收光谱测定其光学带隙。结果表明,低浓度CuSO4.5H2O沉积的氧化铜膜比高浓度镀液沉积的氧化铜膜具有更高的带隙。氧化铜薄膜的带隙也随着镀液的pH值发生显著变化。随着镀液pH的增加,氧化铜膜的带隙减小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Dependency of the band gap of electrodeposited Copper oxide thin films on the concentration of copper sulfate (CuSO4.5H2O) and pH in bath solution for photovoltaic applications
In this study, Copper oxide thin films were deposited on copper plate by electrodeposition process in an electrolytic bath containing CuSO4.5H2O, 3M lactic acid and NaOH. Copper oxide films were electrodeposited at different pH and different concentration of CuSO4.5H2O and the optical band gap was determined from their absorption spectrum which was obtained from UV-Vis absorption spectroscopy. It was found that copper oxide films which were deposited at low concentration of CuSO4.5H2O have higher band gap than those deposited at higher bath concentration. The band gap of copper oxide films also significantly changes with pH of the bath solution. It was also observed that with the increase of the pH of bath solution band gap of copper oxide film decreased.
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