用于工业MCU/物联网应用的28nm FDSOI逻辑工艺中的嵌入式STT-MRAM

2018 IEEE Symposium on VLSI Technology Pub Date : 2018-06-01 DOI:10.1109/VLSIT.2018.8510623

Yong Kyu Lee, Yoonjong Song, Joochan Kim, Sechung Oh, B. Bae, SangHumn Lee, Junghyuk Lee, U. Pi, B. Seo, H. Jung, Kilho Lee, Hyunchul Shin, H. Jung, Mark Pyo, A. Antonyan, Daesop Lee, Sohee Hwang, D. Jang, Yongsung Ji, Seungbae Lee, Jung-Pil Lim, K. Koh, K. Hwang, H. Hong, K. Park, G. Jeong, J. Yoon, E. Jung

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引用次数: 43

摘要

我们首次展示了28纳米嵌入式STT-MRAM在全工业温度范围(- 40~125°C)下工作，具有>1E+6的续航时间和>10年的保留时间，适用于高速MCU/物联网应用。在焊料回流(260°C, 90秒)和外部磁干扰(550-Oe)期间，也演示了稳健的电池操作。它基于28纳米FDSOI技术，采用模块化格式，可用于IP重用，具有巨大的潜力，可用于物联网和高性能MCU等各种应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Embedded STT-MRAM in 28-nm FDSOI Logic Process for Industrial MCU/IoT Application

We demonstrate, for the first time, 28-nm embedded STT-MRAM operating at full industrial temperature range (−40~125°C) with >1E+6 endurance and >10 year retention for high speed MCU/IoT application. Robust cell operation is also demonstrated after solder reflow (260°C, 90 second) and during external magnetic disturbance (550-Oe under writing). It is built on 28-nm FDSOI technology in modular format for IP reuse and has great potential to serve wide variety of applications such as IoT, and high performance MCU.

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2018 IEEE Symposium on VLSI Technology

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