高纵横比通孔的工艺集成及Co和Ru金属化的比较

V. Vega-Gonzalez, D. Montero, J. Versluijs, O. Pedreira, N. Jourdan, H. Puliyalil, B. Chehab, T. Peissker, A. Haider, D. Batuk, G. Martinez, J. Geypen, Q. Le, N. Bazzazian, N. Heylen, M. H. van der Veen, Z. El-Mekki, T. Webers, H. Vats, L. Rynders, M. Cupák, J. Uk-Lee, Y. Drissi, L. Halipré, W. Gillijns, A. Charley, P. Verdonck, T. Witters, S. Gompel, Y. Kimura, I. Ciofi, B. de Wachter, J. Swerts, E. Grieten, M. Ercken, R. Kim, K. Croes, P. Leray, M. Jaysankar, N. Nagesh, L. Ramakers, G. Murdoch, S. Park, Z. Tokei, E. Dentoni-Litta, N. Horiguchi
{"title":"高纵横比通孔的工艺集成及Co和Ru金属化的比较","authors":"V. Vega-Gonzalez, D. Montero, J. Versluijs, O. Pedreira, N. Jourdan, H. Puliyalil, B. Chehab, T. Peissker, A. Haider, D. Batuk, G. Martinez, J. Geypen, Q. Le, N. Bazzazian, N. Heylen, M. H. van der Veen, Z. El-Mekki, T. Webers, H. Vats, L. Rynders, M. Cupák, J. Uk-Lee, Y. Drissi, L. Halipré, W. Gillijns, A. Charley, P. Verdonck, T. Witters, S. Gompel, Y. Kimura, I. Ciofi, B. de Wachter, J. Swerts, E. Grieten, M. Ercken, R. Kim, K. Croes, P. Leray, M. Jaysankar, N. Nagesh, L. Ramakers, G. Murdoch, S. Park, Z. Tokei, E. Dentoni-Litta, N. Horiguchi","doi":"10.1109/IITC51362.2021.9537535","DOIUrl":null,"url":null,"abstract":"The integration of high aspect-ratio (AR) vias or supervias (SV) with a min CDbottom = 10.5 nm and a max AR = 5.8 is demonstrated, allowing a comparison between ruthenium (Ru) and cobalt (Co) chemical vapor deposition (CVD) metallizations. Ru gave a resistance ~2x higher than Co when a 1.1 nm titanium nitride (TiN) film, realized by atomic layer deposition (ALD), was used as an adhesion/nucleation layer. The lowest SV resistance of 56 Ω at the median was obtained with 0.3 nm of titanium oxide (TiOx) ALD and Ru CVD. This configuration gave a 3.4x lower resistance than the equivalent scheme with 0.3 nm TiN ALD and 15% lower resistance than the stacked-via configuration (with 0.3 nm TiOx and Ru fill), meaning that an IR-drop penalty is avoided when compared to the stacked-via approach. A congestion reduction can also be expected from the CD reduction of the SVs as the exclusion area in the intermediate layer can be smaller. Thermal shock tests for both Ru and Co SVs produced no failure after 1000 cycles between −50 °C and 125 °C, and 250 hours.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":"39 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Process Integration of High Aspect Ratio Vias with a Comparison between Co and Ru Metallizations\",\"authors\":\"V. Vega-Gonzalez, D. Montero, J. Versluijs, O. Pedreira, N. Jourdan, H. Puliyalil, B. Chehab, T. Peissker, A. Haider, D. Batuk, G. Martinez, J. Geypen, Q. Le, N. Bazzazian, N. Heylen, M. H. van der Veen, Z. El-Mekki, T. Webers, H. Vats, L. Rynders, M. Cupák, J. Uk-Lee, Y. Drissi, L. Halipré, W. Gillijns, A. Charley, P. Verdonck, T. Witters, S. Gompel, Y. Kimura, I. Ciofi, B. de Wachter, J. Swerts, E. Grieten, M. Ercken, R. Kim, K. Croes, P. Leray, M. Jaysankar, N. Nagesh, L. Ramakers, G. Murdoch, S. Park, Z. Tokei, E. Dentoni-Litta, N. Horiguchi\",\"doi\":\"10.1109/IITC51362.2021.9537535\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The integration of high aspect-ratio (AR) vias or supervias (SV) with a min CDbottom = 10.5 nm and a max AR = 5.8 is demonstrated, allowing a comparison between ruthenium (Ru) and cobalt (Co) chemical vapor deposition (CVD) metallizations. Ru gave a resistance ~2x higher than Co when a 1.1 nm titanium nitride (TiN) film, realized by atomic layer deposition (ALD), was used as an adhesion/nucleation layer. The lowest SV resistance of 56 Ω at the median was obtained with 0.3 nm of titanium oxide (TiOx) ALD and Ru CVD. This configuration gave a 3.4x lower resistance than the equivalent scheme with 0.3 nm TiN ALD and 15% lower resistance than the stacked-via configuration (with 0.3 nm TiOx and Ru fill), meaning that an IR-drop penalty is avoided when compared to the stacked-via approach. A congestion reduction can also be expected from the CD reduction of the SVs as the exclusion area in the intermediate layer can be smaller. Thermal shock tests for both Ru and Co SVs produced no failure after 1000 cycles between −50 °C and 125 °C, and 250 hours.\",\"PeriodicalId\":6823,\"journal\":{\"name\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"volume\":\"39 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC51362.2021.9537535\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC51362.2021.9537535","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

高纵横比(AR)过孔或过孔(SV)的集成,最小CDbottom = 10.5 nm,最大AR = 5.8,允许在钌(Ru)和钴(Co)化学气相沉积(CVD)金属化之间进行比较。用原子层沉积法(ALD)制备1.1 nm的氮化钛(TiN)薄膜作为附着/成核层时,Ru的电阻比Co高2倍。在0.3 nm的氧化钛(TiOx) ALD和Ru CVD中值处,SV电阻最低,为56 Ω。这种结构的电阻比0.3 nm TiN ALD的等效方案低3.4倍,比堆叠通孔结构(0.3 nm TiOx和Ru填充)的电阻低15%,这意味着与堆叠通孔方法相比,避免了ir下降的损失。由于中间层的排除区域可以更小,因此可以期望从sv的CD减少中减少拥塞。在- 50°C和125°C之间进行1000次循环和250小时后,Ru和Co sv的热冲击测试均未出现故障。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Process Integration of High Aspect Ratio Vias with a Comparison between Co and Ru Metallizations
The integration of high aspect-ratio (AR) vias or supervias (SV) with a min CDbottom = 10.5 nm and a max AR = 5.8 is demonstrated, allowing a comparison between ruthenium (Ru) and cobalt (Co) chemical vapor deposition (CVD) metallizations. Ru gave a resistance ~2x higher than Co when a 1.1 nm titanium nitride (TiN) film, realized by atomic layer deposition (ALD), was used as an adhesion/nucleation layer. The lowest SV resistance of 56 Ω at the median was obtained with 0.3 nm of titanium oxide (TiOx) ALD and Ru CVD. This configuration gave a 3.4x lower resistance than the equivalent scheme with 0.3 nm TiN ALD and 15% lower resistance than the stacked-via configuration (with 0.3 nm TiOx and Ru fill), meaning that an IR-drop penalty is avoided when compared to the stacked-via approach. A congestion reduction can also be expected from the CD reduction of the SVs as the exclusion area in the intermediate layer can be smaller. Thermal shock tests for both Ru and Co SVs produced no failure after 1000 cycles between −50 °C and 125 °C, and 250 hours.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信