0.25 μ m通过插头工艺，采用选择性CVD铝进行多级互连

International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI:10.1109/IEDM.1991.235452

T. Amazawa, Y. Arita

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引用次数: 2

摘要

采用选择性CVD(化学气相沉积)铝孔塞工艺成功制备了0.25 μ m通孔的多层互连。通过选择性CVD铝结合原位射频清洗，第一次完全堵塞了一级铝互连上的通孔。CVD铝通孔塞的比接触电阻率估计低至5*10/sup -10/ Omega cm/sup 2/，对于0.25-2 μ m的各种通孔直径的测试模式，10/sup 4/通孔链的成品率为100%。与传统溅射样品相比，CVD铝通孔塞的电迁移测试显示出极高的可靠性。结果表明，选择性铝气相沉积工艺是一种很有前途的制备四分之一微米lsi的技术

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A 0.25 mu m via plug process using selective CVD aluminium for multilevel interconnection

A multilevel interconnection with 0.25- mu m via holes has been successfully fabricated using a selective CVD (chemical vapor deposition) aluminum via plug process. Via holes on first-level aluminum interconnections have been fully plugged for the first time by selective CVD aluminum in combination with in situ RF cleaning. Specific contact resistivities of CVD aluminum via plugs are estimated to be as low as 5*10/sup -10/ Omega cm/sup 2/, and the yield for 10/sup 4/ via chains is 100% for test patterns with various via diameters of 0.25-2 mu m. Electromigration tests for the CVD aluminum plugs demonstrate extremely high reliability compared to conventional sputtering samples. The results presented demonstrate that the selective aluminum CVD process is a promising technique for future quarter-micron LSIs.<>

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来源期刊

International Electron Devices Meeting 1991 [Technical Digest]

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