生物模板与中性束蚀刻相结合制备的量子点太阳能电池三维硅量子点超晶格的高光电流产生

Mohammad Maksudur Rahman, M. Igarashi, Weiguo Hu, M. E. Syazwan, Y. Hoshi, N. Usami, S. Samukawa
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引用次数: 3

摘要

量子点超晶格(QDSL)在新一代光伏技术中具有广阔的应用前景。我们采用先进的自顶向下技术,包括生物模板和中性束蚀刻工艺,制备了具有高纵横比、界面清晰、尺寸均匀的Si-NDs三维QDSL阵列,并对其进行了表征。导电性原子力显微镜测量结果表明,将单Si-ND排列改为具有相同SiC矩阵的二维和三维排列,即改变了波函数的耦合性,电导率提高。此外,我们还测量了3D Si-NDs阵列在量子点太阳能电池内部产生光电流的贡献,并观察到3D Si-NDs阵列对太阳光的光吸收(30%)高于2D Si-NDs阵列(10%)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High photo-current generation in a three-dimensional silicon quantum dot superlattice fabricated by combination of bio-template and neutral beam etching for quantum dot solar cell
A Quantum Dot Superlattice (QDSL) offers high prospect for new generation photovoltaics. We fabricated and characterized a 3-dimensional array of Si-NDs as a QDSL with a high-aspect ratio, clear interface, and uniform size by using our advanced top-down technology consisting of bio-template and neutral beam etching processes for high-efficiency solar cells. Conductive atomic force microscopy measurements revealed that the conductivity became higher as the arrangement was changed from single Si-ND to 2D and 3D arrays with the same matrix of SiC, i.e. the coupling of wave functions was changed. Moreover, we measured the contribution of 3D Si-NDs array in producing photocurrent inside a quantum dot solar cell and also observed a higher photo absorption of sunlight by 3D Si-NDs (30%) than by a 2D array of Si-NDs (10%).
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