模拟硫化钠薄膜的合成

R. McAuliffe, Victoria Petrova, M. McDermott, J. Tyler, Ethan C. Self, K. Persson, Ping Liu, G. Veith
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引用次数: 3

摘要

本文报道了用射频磁控溅射法在Na2S和Na2S2沉积靶材上直接沉积硫化钠模型薄膜。分析表征和电化学循环表明,沉积膜为无定形,化学计量学分别对应于Na2S和Na2S2靶形成的Na2S3和Na2S2。我们认为Na2S靶中Na的损失是由于Na2S中Na - s键断裂所需的更高能量导致Na优先溅射。薄膜硫化钠的发展为了解其基本性质,如Na+输运、电导率和反应性开辟了新的途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis of model sodium sulfide films
We report the direct deposition of model sodium sulfide films by RF magnetron sputtering from Na2S and Na2S2 deposition targets. Analytical characterization and electrochemical cycling indicate that the deposited films are amorphous with stoichiometries that correspond to Na2S3 and Na2S2 formed from the Na2S and Na2S2 targets, respectively. We propose that the loss of Na in the case of the Na2S target is due to preferential sputtering of Na resulting from the higher energy required to break the Na–S bonds in Na2S. The development of thin film sodium sulfides opens a new route to understanding their fundamental properties, such as Na+ transport, conductivity, and reactivity.
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