三维x射线图像的深度学习分析用于自动目标检测和埋藏包装特征的属性测量

R. Pahwa, T. Nwe, Richard Chang, Wang Jie, Oo Zaw Min, S. W. Ho, Ren Qin, V. S. Rao, Yanjing Yang, J. Neumann, R. Pichumani, T. Gregorich
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引用次数: 5

摘要

失效分析是提高半导体制造良率的关键。产量的提高是通过收集、分析、识别缺陷的原因,并应用纠正措施来解决根本原因来完成的。随着tsv、微凸点、rdl等封装互连的不断小型化[1],检测这些隐藏互连中的缺陷变得越来越困难,也越来越重要。传统上,半导体封装采用横截面来识别内部工艺缺陷,如未焊点、焊料短路和焊盘错位。横切是一种破坏性的方法,很难做到,并且只能在单个二维平面上提供信息。由于这种方法的巨大工作量和破坏性,可以生成的数据量通常非常有限。3D x射线显微镜的发展为工业界提供了利用非破坏性的三维技术成像和分析埋藏特征(如微凸起、tsv和其他金属结构)的能力[2]。与此同时,深度学习已经彻底改变了其他技术,如视觉监控、预测性维护[3]、目标检测[4],现在正在彻底改变半导体的缺陷检测。当3D x射线显微镜和深度学习结合在一起使用时,正在建立包装检查和计量的新范式。在本文中,我们将提出一种自动检测半导体封装内部异常的新方法,并使用深度学习来评估这些互连的属性。采用热压键合技术制备和组装具有代表性的堆叠2.5D封装芯片。通过改变键合参数,可以制造出具有不同键合线厚度、不同焊角形状和不同焊盘对准方案的封装。使用商用3D x射线成像工具对这些包裹进行高质量的层析成像。采用深度学习和基于计算机视觉的方法自动检测内部特征和测量属性。数据分析采用三步程序。在第一步中,使用改进的单镜头检测器对象模型检测每个感兴趣区域(Copper Pillar, Pad等)的边界框。在第二步中,我们在感兴趣的区域内分离特征并对其进行三维分割。第三步和最后一步利用自动三维计量使用分割区域。利用强大的三维计算机视觉技术来测量芯片制造和过程控制步骤的关键属性——空隙的程度。这是一篇多部分论文的第一部分。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Deep Learning Analysis of 3D X-ray Images for Automated Object Detection and Attribute Measurement of Buried Package Features
Failure analysis is crucial in improving semiconductor manufacturing yields. Yield improvement is done by collecting, analyzing, identifying the causes of defects, and applying corrective actions to resolve the root causes. With the ongoing miniaturization of TSVs, micro-bumps, RDLs, and other package interconnects [1], detecting defects in these buried interconnects is becoming more difficult as well as more important. Traditionally semiconductor packages are cross-sectioned to identify internal process defects such as unsolders, solder shorts, and pad misalignment. Cross-sectioning is a destructive approach, is difficult to do, and provides information in a single 2D plane only. Due to the large effort and the destructive nature of this approach, the amount of data that can be generated is typically quite limited. The development of 3D x-ray microscopy provides industry with the capability to image and analyze buried features such as micro-bumps, TSVs, and other metallic structures using a non-destructive, 3-dimensional technology [2]. At the same time, deep learning has revolutionized other technologies such as visual surveillance, predictive maintenance [3], object detection [4], and is now revolutionizing defect detection in semiconductors. When used together, the combination of 3D x-ray microscopy and deep learning is establishing a new paradigm in package inspection and metrology. In this paper, we will present a novel method for automatically detecting internal anomalies in semiconductor packages and using deep learning to assess the attributes of these interconnects. Chips representative of stacked 2.5D packages were fabricated and assembled using thermo-compression bonding. Bonding parameters were varied in order to create packages with different bond line thickness, different solder fillet shapes, and various pad alignment scenarios. A commercial 3D x-ray imaging tool was used to create high-quality tomographies of these packages. Deep-learning and computer vision-based methods were employed to automatically detect internal features and measure attributes. A three-step procedure was used for data analysis. In the first step, a bounding box was detected for each region of interest (Copper Pillar, Pad, etc.) using a modified single shot detector object model. In the second step, we isolated features within the region of interest and performed 3D segmentation on them. The third and final step utilized automated 3D metrology using the segmented regions. Robust 3D computer vision techniques were deployed to measure the extent of voids which are key attributes for the chip fabrication and process control step. This is the first part of a multi-part paper.
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