半导体器件仿真的离散b样条小波方法

F. Chang, K. Pun
{"title":"半导体器件仿真的离散b样条小波方法","authors":"F. Chang, K. Pun","doi":"10.1109/ISCAS.1997.608664","DOIUrl":null,"url":null,"abstract":"Wavelet Method has been found to be very effective in treating singularities due to its properties of localization both in time/spatial and frequency domains. Singularities exist in the simulation of semiconductor devices. We now introduce the Discrete B-spline wavelet method for semiconductor devices simulation. Starting from the governing equations of semiconductor devices, the wavelet basis is used to solve these nonlinear ordinary differential equations. We find it much better than conventional finite difference methods in both computational time and accuracy. As an example, the steady state response of an abrupt P-N junction diode demonstrates this effectiveness.","PeriodicalId":68559,"journal":{"name":"电路与系统学报","volume":"8 1","pages":"193-196 vol.1"},"PeriodicalIF":0.0000,"publicationDate":"1997-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Discrete B-spline wavelet method for semiconductor device simulation\",\"authors\":\"F. Chang, K. Pun\",\"doi\":\"10.1109/ISCAS.1997.608664\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Wavelet Method has been found to be very effective in treating singularities due to its properties of localization both in time/spatial and frequency domains. Singularities exist in the simulation of semiconductor devices. We now introduce the Discrete B-spline wavelet method for semiconductor devices simulation. Starting from the governing equations of semiconductor devices, the wavelet basis is used to solve these nonlinear ordinary differential equations. We find it much better than conventional finite difference methods in both computational time and accuracy. As an example, the steady state response of an abrupt P-N junction diode demonstrates this effectiveness.\",\"PeriodicalId\":68559,\"journal\":{\"name\":\"电路与系统学报\",\"volume\":\"8 1\",\"pages\":\"193-196 vol.1\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-06-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"电路与系统学报\",\"FirstCategoryId\":\"1093\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCAS.1997.608664\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"电路与系统学报","FirstCategoryId":"1093","ListUrlMain":"https://doi.org/10.1109/ISCAS.1997.608664","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

由于小波方法在时间/空间和频率域的局域性,它是一种非常有效的处理奇异点的方法。奇点存在于半导体器件的仿真中。现在我们介绍离散b样条小波方法用于半导体器件的仿真。从半导体器件的控制方程出发,利用小波基求解这些非线性常微分方程。结果表明,该方法在计算时间和精度上都优于传统的有限差分方法。作为一个例子,一个突变pn结二极管的稳态响应证明了这种有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Discrete B-spline wavelet method for semiconductor device simulation
Wavelet Method has been found to be very effective in treating singularities due to its properties of localization both in time/spatial and frequency domains. Singularities exist in the simulation of semiconductor devices. We now introduce the Discrete B-spline wavelet method for semiconductor devices simulation. Starting from the governing equations of semiconductor devices, the wavelet basis is used to solve these nonlinear ordinary differential equations. We find it much better than conventional finite difference methods in both computational time and accuracy. As an example, the steady state response of an abrupt P-N junction diode demonstrates this effectiveness.
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