基于高k光接口工程的大内存窗口和长脉冲循环耐用性的ffet存储器

C. Chan, Kuen-Yi Chen, Hao-Kai Peng, Yung-Hsien Wu
{"title":"基于高k光接口工程的大内存窗口和长脉冲循环耐用性的ffet存储器","authors":"C. Chan, Kuen-Yi Chen, Hao-Kai Peng, Yung-Hsien Wu","doi":"10.1109/VLSITechnology18217.2020.9265103","DOIUrl":null,"url":null,"abstract":"Without destabilizing the ferroelectric (FE) phase, high-k AlON with [N] of ~ 13 % was proposed as the interfacial layer (IL) between FE HfZrOx (HZO) and Si substrate for FeFET memory to enhance the memory window (MW) while improving reliability compared to SiO2 IL. The AlON-based memory shows promising performance in terms of a large MW of 3.1 V by ±4 V operation, long retention up to 10 years, and robust endurance up to 105 cycles with a long pulse width of 10−4 s, outstanding other FeFET memory devices. It is ascribed to the high k value and larger ΔEv that respectively allow a lower voltage drop across the IL and suppress hole trapping. [N] in the IL also enhances the thermal stability that Inhibits sub-IL formation by restraining the reaction of residual OH groups with Si substrate. Besides, the AlON and FE-HZO can be integrated in a single ALD step to simplify the process. From device performance and process viewpoints, AlON paves a promising avenue to enable more reliable and feasible FeFET memory.","PeriodicalId":6850,"journal":{"name":"2020 IEEE Symposium on VLSI Technology","volume":"5 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"FeFET Memory Featuring Large Memory Window and Robust Endurance of Long-Pulse Cycling by Interface Engineerlng Using High-k AlON\",\"authors\":\"C. Chan, Kuen-Yi Chen, Hao-Kai Peng, Yung-Hsien Wu\",\"doi\":\"10.1109/VLSITechnology18217.2020.9265103\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Without destabilizing the ferroelectric (FE) phase, high-k AlON with [N] of ~ 13 % was proposed as the interfacial layer (IL) between FE HfZrOx (HZO) and Si substrate for FeFET memory to enhance the memory window (MW) while improving reliability compared to SiO2 IL. The AlON-based memory shows promising performance in terms of a large MW of 3.1 V by ±4 V operation, long retention up to 10 years, and robust endurance up to 105 cycles with a long pulse width of 10−4 s, outstanding other FeFET memory devices. It is ascribed to the high k value and larger ΔEv that respectively allow a lower voltage drop across the IL and suppress hole trapping. [N] in the IL also enhances the thermal stability that Inhibits sub-IL formation by restraining the reaction of residual OH groups with Si substrate. Besides, the AlON and FE-HZO can be integrated in a single ALD step to simplify the process. From device performance and process viewpoints, AlON paves a promising avenue to enable more reliable and feasible FeFET memory.\",\"PeriodicalId\":6850,\"journal\":{\"name\":\"2020 IEEE Symposium on VLSI Technology\",\"volume\":\"5 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSITechnology18217.2020.9265103\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSITechnology18217.2020.9265103","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20

摘要

不稳定铁电(FE)阶段,high-k阿龙的[N]提出了~ 13%之间的界面层(IL)菲HfZrOx (HZO)和Si衬底FeFET内存提高内存窗(MW),同时提高可靠性相比,二氧化硅。AlON-based内存显示有前途的性能而言,3.1 V的大型兆瓦±4 V操作,长时间保留十年,和强大的耐力105周期的长脉冲宽度10−4 s,优秀的其他ffet存储器件。这是由于高k值和较大的ΔEv分别允许在IL上的低电压降和抑制空穴捕获。IL中的[N]也增强了热稳定性,通过抑制残余OH基团与Si衬底的反应抑制亚IL的形成。此外,AlON和FE-HZO可以集成在一个ALD步骤中,以简化过程。从器件性能和工艺角度来看,AlON为实现更可靠和可行的ffet存储器铺平了一条有前途的道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
FeFET Memory Featuring Large Memory Window and Robust Endurance of Long-Pulse Cycling by Interface Engineerlng Using High-k AlON
Without destabilizing the ferroelectric (FE) phase, high-k AlON with [N] of ~ 13 % was proposed as the interfacial layer (IL) between FE HfZrOx (HZO) and Si substrate for FeFET memory to enhance the memory window (MW) while improving reliability compared to SiO2 IL. The AlON-based memory shows promising performance in terms of a large MW of 3.1 V by ±4 V operation, long retention up to 10 years, and robust endurance up to 105 cycles with a long pulse width of 10−4 s, outstanding other FeFET memory devices. It is ascribed to the high k value and larger ΔEv that respectively allow a lower voltage drop across the IL and suppress hole trapping. [N] in the IL also enhances the thermal stability that Inhibits sub-IL formation by restraining the reaction of residual OH groups with Si substrate. Besides, the AlON and FE-HZO can be integrated in a single ALD step to simplify the process. From device performance and process viewpoints, AlON paves a promising avenue to enable more reliable and feasible FeFET memory.
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