选择性CVD和MoCl5插层制备高掺杂MLG图

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2021-07-06 DOI:10.1109/IITC51362.2021.9537349

E. Ketsombun, T. Akimoto, K. Ueno

{"title":"选择性CVD和MoCl5插层制备高掺杂MLG图","authors":"E. Ketsombun, T. Akimoto, K. Ueno","doi":"10.1109/IITC51362.2021.9537349","DOIUrl":null,"url":null,"abstract":"Doped MLG is expected as an inductor material with high inductance density due to its high kinetic inductance. A practical fabrication process for doped MLG patterns is developed using a selective CVD on Ni catalyst patterns and stable MoCl5 intercalation. The highly doped MLG patterns of stage-2 were realized by CVD-MLG with a G/D ratio of 20 or more, and the sheet-resistance could be reduced.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":"86 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Fabrication of Highly Doped MLG Patterns Using Selective CVD and MoCl5 Intercalation\",\"authors\":\"E. Ketsombun, T. Akimoto, K. Ueno\",\"doi\":\"10.1109/IITC51362.2021.9537349\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Doped MLG is expected as an inductor material with high inductance density due to its high kinetic inductance. A practical fabrication process for doped MLG patterns is developed using a selective CVD on Ni catalyst patterns and stable MoCl5 intercalation. The highly doped MLG patterns of stage-2 were realized by CVD-MLG with a G/D ratio of 20 or more, and the sheet-resistance could be reduced.\",\"PeriodicalId\":6823,\"journal\":{\"name\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"volume\":\"86 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC51362.2021.9537349\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC51362.2021.9537349","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

由于掺杂MLG具有较高的动态电感，因此有望成为一种具有高电感密度的电感材料。在Ni催化剂上采用选择性CVD和稳定的MoCl5插入，开发了一种实用的掺杂MLG图的制备工艺。CVD-MLG实现了第二阶段的高掺杂MLG模式，其G/D比为20或更高，并且可以降低片电阻。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Fabrication of Highly Doped MLG Patterns Using Selective CVD and MoCl5 Intercalation

Doped MLG is expected as an inductor material with high inductance density due to its high kinetic inductance. A practical fabrication process for doped MLG patterns is developed using a selective CVD on Ni catalyst patterns and stable MoCl5 intercalation. The highly doped MLG patterns of stage-2 were realized by CVD-MLG with a G/D ratio of 20 or more, and the sheet-resistance could be reduced.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2021 IEEE International Interconnect Technology Conference (IITC)

自引率

0.00%

发文量