选择性CVD和MoCl5插层制备高掺杂MLG图

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2021-07-06 DOI:10.1109/IITC51362.2021.9537349

E. Ketsombun, T. Akimoto, K. Ueno

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引用次数: 1

摘要

由于掺杂MLG具有较高的动态电感，因此有望成为一种具有高电感密度的电感材料。在Ni催化剂上采用选择性CVD和稳定的MoCl5插入，开发了一种实用的掺杂MLG图的制备工艺。CVD-MLG实现了第二阶段的高掺杂MLG模式，其G/D比为20或更高，并且可以降低片电阻。

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Fabrication of Highly Doped MLG Patterns Using Selective CVD and MoCl5 Intercalation

Doped MLG is expected as an inductor material with high inductance density due to its high kinetic inductance. A practical fabrication process for doped MLG patterns is developed using a selective CVD on Ni catalyst patterns and stable MoCl5 intercalation. The highly doped MLG patterns of stage-2 were realized by CVD-MLG with a G/D ratio of 20 or more, and the sheet-resistance could be reduced.

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2021 IEEE International Interconnect Technology Conference (IITC)

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