简述半导体加工中的原子层沉积和蚀刻

Guangjie Yuan, Ning Wang, Shirong Huang, Johan Liu
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引用次数: 8

摘要

原子层沉积(ALD)和原子层刻蚀(ALE)是半导体加工中的两种重要技术,分别是超薄膜沉积和刻蚀的研究热点。这两种材料都具有自限制表面行为,在沉积和蚀刻过程中都能实现原子尺度的保真度。与传统的化学气相沉积(CVD)和物理气相沉积(PVD)不同,ALD具有良好的台阶覆盖、原子尺度的厚度可控性和低温下的成分均匀性。与传统的连续波等离子体刻蚀相比,ALE具有表面光滑、深度均匀性好和原子尺度厚度可控性等优点。本文综述了它们的基本原理和应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A brief overview of atomic layer deposition and etching in the semiconductor processing
Atomic layer deposition (ALD) and atomic layer etching (ALE) are two important techniques in the semiconductor processing, which focus ultra-thin film deposition and etching, respectively. Both of them have the self-limiting surface behavior, and could realize the atomic-scale fidelity in the deposition and etching processes. Unlike traditional chemical vapor deposition (CVD) and physical vapor deposition (PVD), ALD has good step coverage, atomic-scale thickness controllability, and composition uniformity at low growth temperature. Compared with traditional continuous-wave plasma etching, ALE has smooth surface, excellent depth uniformity and atomic-scale thickness controllability. In this review, their fundamental and applications have been discussed.
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