铜/石墨烯集成方案在CMOS BEOL互连中的应用评估

Xiaoxu Kang, Zhengxi Cheng, Qingyun Zuo, Weijun Wang, Ruoxi Shen, Xiaolan Zhong, Zhangfa Chen, Shoumian Chen, Yuhang Zhao
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引用次数: 0

摘要

随着CMOS技术特征尺寸的不断缩小,铜互连的电磁可靠性问题日益严峻。石墨烯作为二维材料,可以承受更高的电流密度,在CMOS BEOL互连中具有潜在的应用价值。在铜金属线上引入石墨烯作为封盖层将是提高铜互连电磁性能的有效途径。本文基于200mm Cu BEOL实现了不同的Cu/石墨烯集成方案,包括基于转移的方案和自对准方案,并对这些方案的优缺点进行了分析。进一步优化集成方案,实现200mm Cu BEOL上铜/石墨烯互连的工艺集成仍在进行中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Evaluation of Cu/Graphene Integration Schemes for Its Application on CMOS BEOL Interconnect
With CMOS technology feature size continually scaling down, EM reliability issue of Cu interconnect is becoming more and more severe. As a 2D material, Graphene can sustain much higher current density, which may have potential application value to CMOS BEOL interconnect. And introduction of Graphene as capping layer on Cu metal line will be a much more effective way to improve the Cu interconnect EM performance. In this work, different Cu/Graphene integration schemes were implemented and evaluated based on 200mm Cu BEOL, including transfer based scheme and self-aligned scheme, and advantages and drawbacks of these schemes were analyzed. Further work is still ongoing for optimizing the integration scheme and realizing process integration of the Cu/Graphene interconnect on 200mm Cu BEOL.
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