镶嵌铜金属化用超低介电常数绝缘子材料性能要求及性能评价

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Pub Date : 2001-12-02 DOI:10.1109/IEDM.2001.979406

J. Wetzel, S.H. Lin, E. Mickler, J. Lee, B. Ahlbum, C. Jin, R. Fox, M. Tsai, W. Mlynko, K. Monnig, P. Winebarger

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引用次数: 5

摘要

讨论了超低介电常数绝缘体的选择和集成所面临的技术挑战。建立了一级金属镶嵌铜集成电路中材料性能与其性能的关系。候选材料的介电常数由线对线电容测量和有限元法估计。讨论了介电常数变化的意义。

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Evaluation of material property requirements and performance of ultra-low dielectric constant insulators for inlaid copper metallization

Technological challenges for selection and integration of ultra-low dielectric constant insulators are discussed. Correlations of material properties with their performance in 1 level-metal inlaid copper integration are established. Dielectric constants of candidate materials are estimated from line-to-line capacitance measurements and FEM. Implications regarding the changes in dielectric constant are discussed.

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International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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