金属和氧化石墨烯电极的电弧侵蚀直接写入模式,用于有机器件制造

M. García-Vélez, Á. L. Álvarez, C. Coya, G. Alvarado, X. Díez-Betriu, A. de Andrés, J. Jiménez-Trillo
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引用次数: 0

摘要

在低连续电压下进行的电弧侵蚀最近被证明是一种成功的不同导电材料薄膜的图案化技术。在这项工作中,我们将这一过程应用于通常用于器件电极的材料,如氧化铟锡(ITO)、金(Au)、氧化石墨烯(GO)或铝掺杂氧化锌(AZO),并对亚微米尺度下的放电产生进行了更深入的研究,从而可以优化这一过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Direct-write patterning of metals and graphene oxide electrodes by arc erosion for organic device manufacturing
Electric arc erosion performed at low continuous voltages has been recently proven as a successful patterning technique for thin films of different conductive materials. In this work, we present an application of this procedure to materials typically aimed for device electrodes, such as indium tin oxide (ITO), gold (Au), graphene oxide (GO) or aluminum doped zinc oxide (AZO), as well as a more in depth study of the electrical discharge generation at submicron scale, which allows optimizing the procedure.
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