F. Thome, E. Ture, A. Leuther, F. Schäfer, A. Navarrini, P. Serres, O. Ambacher
{"title":"用于射电天文多像素接收机的全集成w波段I/ q下变频MMIC","authors":"F. Thome, E. Ture, A. Leuther, F. Schäfer, A. Navarrini, P. Serres, O. Ambacher","doi":"10.1109/IMS30576.2020.9223856","DOIUrl":null,"url":null,"abstract":"In this paper, a W-band I/Q-down-conversion monolithic microwave integrated circuit (MMIC) is presented. The MMIC is based on the Fraunhofer IAF 50-nm gate-length metamorphic high-electron-mobility transistor technology and contains an RF 3-dB quadrature coupler, two subharmonically-pumped mixer cells, two IF low-noise amplifiers, and an LO chain including a frequency tripler, a band-pass filter, and two power amplifiers. The nonlinear circuits use an anti-parallel Schottky diode topology. The circuit covers an RF and IF bandwidth from at least 75 to 110 GHz and 3 to 13 GHz, respectively. The MMIC exhibits a single-sideband conversion gain of up to 17 dB and an average double-sideband noise figure in the range of 14.2-15.4 dB. The input-referred one-decibel compression point is up to -7 dBm. To the best of our knowledge, the presented W-band I/Q-down-conversion MMIC demonstrates state-of-the-art results with regards to complexity and performance.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"115 1","pages":"193-196"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A Fully-Integrated W-Band I/Q-Down-Conversion MMIC for Use in Radio Astronomical Multi-Pixel Receivers\",\"authors\":\"F. Thome, E. Ture, A. Leuther, F. Schäfer, A. Navarrini, P. Serres, O. Ambacher\",\"doi\":\"10.1109/IMS30576.2020.9223856\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a W-band I/Q-down-conversion monolithic microwave integrated circuit (MMIC) is presented. The MMIC is based on the Fraunhofer IAF 50-nm gate-length metamorphic high-electron-mobility transistor technology and contains an RF 3-dB quadrature coupler, two subharmonically-pumped mixer cells, two IF low-noise amplifiers, and an LO chain including a frequency tripler, a band-pass filter, and two power amplifiers. The nonlinear circuits use an anti-parallel Schottky diode topology. The circuit covers an RF and IF bandwidth from at least 75 to 110 GHz and 3 to 13 GHz, respectively. The MMIC exhibits a single-sideband conversion gain of up to 17 dB and an average double-sideband noise figure in the range of 14.2-15.4 dB. The input-referred one-decibel compression point is up to -7 dBm. To the best of our knowledge, the presented W-band I/Q-down-conversion MMIC demonstrates state-of-the-art results with regards to complexity and performance.\",\"PeriodicalId\":6784,\"journal\":{\"name\":\"2020 IEEE/MTT-S International Microwave Symposium (IMS)\",\"volume\":\"115 1\",\"pages\":\"193-196\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE/MTT-S International Microwave Symposium (IMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMS30576.2020.9223856\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMS30576.2020.9223856","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Fully-Integrated W-Band I/Q-Down-Conversion MMIC for Use in Radio Astronomical Multi-Pixel Receivers
In this paper, a W-band I/Q-down-conversion monolithic microwave integrated circuit (MMIC) is presented. The MMIC is based on the Fraunhofer IAF 50-nm gate-length metamorphic high-electron-mobility transistor technology and contains an RF 3-dB quadrature coupler, two subharmonically-pumped mixer cells, two IF low-noise amplifiers, and an LO chain including a frequency tripler, a band-pass filter, and two power amplifiers. The nonlinear circuits use an anti-parallel Schottky diode topology. The circuit covers an RF and IF bandwidth from at least 75 to 110 GHz and 3 to 13 GHz, respectively. The MMIC exhibits a single-sideband conversion gain of up to 17 dB and an average double-sideband noise figure in the range of 14.2-15.4 dB. The input-referred one-decibel compression point is up to -7 dBm. To the best of our knowledge, the presented W-band I/Q-down-conversion MMIC demonstrates state-of-the-art results with regards to complexity and performance.