电迁移短长度效应及其对电路可靠性的影响

A. Oates
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引用次数: 6

摘要

由于机械应力梯度引起的回流而消除电迁移的短长度效应对电迁移失效的特征有深远的影响。在这里,我们回顾了最近在Cu/低k互连中短长度电迁移失效的研究。我们表明,在电流密度低于临界值时,会发生空化失效。我们开发了一个模型,可以准确地预测失效分布,作为应力变量、导体几何形状和被动储层存在的函数。我们还讨论了短长度电迁移的缩放问题,并表明随着技术缩放,故障次数比长长度电迁移减少得更快。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The electromigration short — Length effect and its impact on circuit reliability
The short-length effect, whereby electromigration is eliminated due a mechanical stress-gradient induced backflow has a profound impact on the characteristics of electromigration failure. Here we review our recent studies of electromigration failure at short lengths in Cu/low-k interconnects. We show that voiding failures can occur at current densities below the critical value. We develop a model that accurately predicts failure distributions as a function of stress variables, conductor geometry, and presence of passive reservoirs. We also discuss the scaling of electromigration at short - lengths, and show that failure times decrease even more rapidly than long-lengths with technology scaling.
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