溅射氧化钌神经刺激和记录电极的电化学性能

Bitan Chakraborty
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引用次数: 0

摘要

一种长期稳定的电极材料,具有记录神经活动的低阻抗和用于功能性电刺激的高电荷注入能力,是制造旨在恢复人类受损或失去的神经功能的可植入微电极阵列所需要的。为此,我们研究了沉积在平面微电极阵列上的溅射氧化钌(RuOx)电极涂层的电化学性能,使用37°C的无机间隙流体模型(模型- isf)作为电解质。通过循环伏安法(CV)和电化学阻抗谱(EIS)建模研究,我们确定了法拉第反应在±0.6 V vs. Ag|AgCl的安全神经刺激电位窗口内是主要的电荷注入贡献者。我们还通过在不同脉冲宽度下施加恒定的每相电荷电流刺激,以及在电压瞬态测量期间比较前导和后导接入电压的大小,建立了溅射氧化膜电荷注入过程的可逆性。最后,溅射的RuOx薄膜在氧化和还原状态下的阻抗相当,尽管完全氧化膜在0.6 V左右的电子贡献略高于还原膜在−0.6 V左右的电子贡献。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrochemical Properties of Sputtered Ruthenium Oxide Neural Stimulation and Recording Electrodes
A chronically stable electrode material with a low impedance for recording neural activity, and a high charge-injection capacity for functional electro-stimulation is desirable for the fabrication of implantable microelectrode arrays that aim to restore impaired or lost neurological functions in humans. For this purpose, we have investigated the electrochemical properties of sputtered ruthenium oxide (RuOx) electrode coatings deposited on planar microelectrode arrays, using an inorganic model of interstitial fluid (model-ISF) at 37 °C as the electrolyte. Through a combination of cyclic voltammetry (CV) and an electrochemical impedance spectroscopy (EIS) modelling study, we have established the contribution of the faradaic reaction as the major charge-injection contributor within the safe neural stimulation potential window of ±0.6 V vs. Ag|AgCl. We have also established the reversibility of the charge-injection process for sputtered RuOx film, by applying constant charge-per-phase current stimulations at different pulse widths, and by comparing the magnitudes of the leading and trailing access voltages during voltage transient measurements. Finally, the impedance of the sputtered RuOx film was found to be reasonably comparable in both its oxidized and reduced states, although the electronic contribution from the capacitive double-layer was found to be slightly higher for the completely oxidized film around 0.6 V than for its reduced counterpart around −0.6 V.
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CiteScore
6.30
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