用于空间应用的宽带隙元件

2019 European Space Power Conference (ESPC) Pub Date : 2019-09-01 DOI:10.1109/ESPC.2019.8932059

S. K. Bernard, O. Mansilla, L. Pearce, W. H. Newman, E. Thomson

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引用次数: 0

摘要

本文将介绍GaN相对于传统硅的好处和优势，并总结瑞萨GaN场效应管的单事件效应(SEE)测试。本文还将讨论SEE测试的结果以及它们对于典型的地球同步轨道(GEO)任务的意义。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Wide Bandgap Components for Space Applications

This paper will go over the benefits and advantages of GaN over traditional silicon and summarize the Single Event Effects (SEE) testing that was done for Renesas' GaN FETs. This paper will also discuss the results of the SEE testing and what they mean with respect to a typical Geosynchronous Orbit (GEO) mission.

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来源期刊

2019 European Space Power Conference (ESPC)

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