等离子体爆轰不稳定性促进双栅极HEMT中太赫兹辐射

2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) Pub Date : 2021-08-29 DOI:10.1109/IRMMW-THz50926.2021.9567205

T. Hosotani, A. Satou, T. Otsuji

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引用次数: 0

摘要

实验观察了双栅极高电子迁移率晶体管在120k下不同偏置条件下的光混合太赫兹辐射。观测到的发射光谱峰值频率与等离子体模式频率的理论计算结果吻合较好，表明当电子漂移速度超过等离子体腔边界处的等离子体速度时，光混合太赫兹辐射被直流驱动的等离子体爆轰型不稳定性放大。

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THz Emission in a Dual-Grating-Gate HEMT Promoted by the Plasmonic Boom Instability

We experimentally observed photomixed THz emission from a dual-grating-gate high-electron-mobility transistor under different bias conditions at 120 K with irradiating photomixed dual-CW-IR laser beams. The observed emission spectral peak frequencies meet well to the theoretical calculations for plasmon mode frequencies, suggesting the photomixed THz emission is amplified by the DC-current-driven plasmonic boom type instability when the electron drift velocity exceeds the plasmon velocity at the plasmon cavity boundary.

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2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)

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