用于高密度扇出封装的晶圆级无空隙模制下填料

I. Mok, JaeHun Bae, WonMyoung Ki, HoDol Yoo, S. Ryu, SooHyun Kim, Gyuick Jung, Taekyeong Hwang, Wonchul Do
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引用次数: 1

摘要

在本研究中,利用高密度扇出(HDFO)测试车采用晶圆级压缩成型工艺,对无空洞的晶圆级模压下填料(WLMUF)工艺进行了实验和模流模拟结果。采用再分布层(RDL)优先技术,采用3层细间距RDL结构。测试样品包括$11.5 \ × 12.5-\text{mm}^{2}$的模具,模具周围有高大的铜柱。采用破坏分析方法对整个晶圆区域的MUF空洞进行了清晰的检测。使用模具磨床将成型晶圆磨到存在MUF空洞的凸起区域,并通过高分辨率范围检查MUF空洞。研究了不同环氧树脂模压复合材料(EMC)的常规压缩成型工艺的WLMUF特性。采用优化的电磁兼容(EMC)点胶方法和参数,实现了无空洞的WLMUF工艺。通过模流仿真验证了上述结果,并与实验结果相吻合。最后,在抗湿性测试(MRT)三级后,通过了温度循环(TC)、高温储存(HTS)和无偏高加速应力测试(UHAST)的可靠性测试。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Wafer Level Void-Free Molded Underfill for High-Density Fan-out Packages
In this study, experiments and mold flow simulation results are presented for a void-free wafer level molded underfill (WLMUF) process with High-Density Fan-Out (HDFO) test vehicles using a wafer-level compression molding process. The redistribution layer (RDL)-first technology was applied with 3 layers of a fine-pitch RDL structure. The test samples comprised $11.5 \times 12.5-\text{mm}^{2}$ die with tall copper (Cu) pillars around the die. Destructive analysis was used to clearly inspect MUF voids on the whole wafer area. The molded wafer was ground to the bump area where the MUF voids exist using a mold grinding machine and MUF voids were inspected through a high-resolution scope. The WLMUF characteristics of the conventional compression molding process with various epoxy molding compound (EMC) types have been investigated. A void-free WLMUF process was achieved by applying an optimized EMC dispensing method and parameters. These results are verified through the mold flow simulation, which correlated to the experimental results. Finally, the void-free WLMUF HDFO samples passed reliability tests of temperature cycling (TC), high temperature storage (HTS) and Unbiased Highly Accelerated Stress Test (UHAST) after moisture resistance test (MRT) Level 3.
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