低电压可调CMOS施密特触发器

2011 Fourth International Conference on Modeling, Simulation and Applied Optimization Pub Date : 2011-04-19 DOI:10.1109/ICMSAO.2011.5775531

Pratchayaporn Singhanath, A. Suadet, Arnon Kanjanop, Thawatchai Thongleam, Sanya Kuankid, V. Kasemsuwan

{"title":"低电压可调CMOS施密特触发器","authors":"Pratchayaporn Singhanath, A. Suadet, Arnon Kanjanop, Thawatchai Thongleam, Sanya Kuankid, V. Kasemsuwan","doi":"10.1109/ICMSAO.2011.5775531","DOIUrl":null,"url":null,"abstract":"This paper presents a low voltage adjustable CMOS Schmitt trigger using dynamic threshold MOS (DTMOS). Cross-coupled inverter with body control is employed to speed up the switching process, and control the intensity of the feedback. The proposed Schmitt trigger has been designed using 0.18 μm 0.4 V CMOS technology and analyzed using PSPICE with BSIM3V3 device models. The simulation results show rail-to-rail operation and independently adjustable switching voltages for both low-to-high (VT(LH)) and high-to-low (VT(HL)) as high as 15 % of the supply voltage. The power dissipation is 0.13 μW.","PeriodicalId":6383,"journal":{"name":"2011 Fourth International Conference on Modeling, Simulation and Applied Optimization","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"Low voltage adjustable CMOS Schmitt trigger\",\"authors\":\"Pratchayaporn Singhanath, A. Suadet, Arnon Kanjanop, Thawatchai Thongleam, Sanya Kuankid, V. Kasemsuwan\",\"doi\":\"10.1109/ICMSAO.2011.5775531\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a low voltage adjustable CMOS Schmitt trigger using dynamic threshold MOS (DTMOS). Cross-coupled inverter with body control is employed to speed up the switching process, and control the intensity of the feedback. The proposed Schmitt trigger has been designed using 0.18 μm 0.4 V CMOS technology and analyzed using PSPICE with BSIM3V3 device models. The simulation results show rail-to-rail operation and independently adjustable switching voltages for both low-to-high (VT(LH)) and high-to-low (VT(HL)) as high as 15 % of the supply voltage. The power dissipation is 0.13 μW.\",\"PeriodicalId\":6383,\"journal\":{\"name\":\"2011 Fourth International Conference on Modeling, Simulation and Applied Optimization\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 Fourth International Conference on Modeling, Simulation and Applied Optimization\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMSAO.2011.5775531\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Fourth International Conference on Modeling, Simulation and Applied Optimization","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMSAO.2011.5775531","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 15

摘要

提出了一种基于动态阈值MOS (DTMOS)的低压可调CMOS施密特触发器。采用带体控制的交叉耦合逆变器来加快开关过程，并控制反馈的强度。采用0.18 μm 0.4 V CMOS技术设计了Schmitt触发器，并利用PSPICE对BSIM3V3器件模型进行了分析。仿真结果表明，低到高(VT(LH))和高到低(VT(HL))的开关电压高达电源电压的15%，轨到轨运行和独立可调。功耗为0.13 μW。

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Low voltage adjustable CMOS Schmitt trigger

This paper presents a low voltage adjustable CMOS Schmitt trigger using dynamic threshold MOS (DTMOS). Cross-coupled inverter with body control is employed to speed up the switching process, and control the intensity of the feedback. The proposed Schmitt trigger has been designed using 0.18 μm 0.4 V CMOS technology and analyzed using PSPICE with BSIM3V3 device models. The simulation results show rail-to-rail operation and independently adjustable switching voltages for both low-to-high (VT(LH)) and high-to-low (VT(HL)) as high as 15 % of the supply voltage. The power dissipation is 0.13 μW.

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来源期刊

2011 Fourth International Conference on Modeling, Simulation and Applied Optimization

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