单片集成静电xyz级的拓扑层开关技术

2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS) Pub Date : 2007-01-01 DOI:10.1109/MEMSYS.2007.4432992

Kazuhiro Takahashi, M. Mita, Hiroyuki Fujita, H. Toshiyoshi

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引用次数: 10

摘要

我们报告了一个单片xyz级静电梳机制集成在只有两个硅层和三个光刻步骤，拓扑上切换层的分配为电气和弹性组件。X-阶段分别在X和y方向上移动了19 μ m，也在对角线方向上移动。我们已经成功地演示了在施加200 V电压的情况下，z方向上的最大2.12 mum。

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Topological layer switch technique for monolithically integrated electrostatic XYZ-stage

We report a monolithic XYZ-stage with electrostatic comb-mechanisms integrated in only two silicon layers and by three photolithography steps that topologically switches the allocation of layer for electrical and elastic components. The XY-stage moved in the X- and the Y-direction by 19 mum independently, and also in the diagonal direction. We have successfully demonstrated maximum 2.12 mum in the Z-direction with applied voltage of 200 V.

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来源期刊

2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS)

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