M.Y. Yang, S.B. Chen, A. Chin, C. Sun, B. Lan, S. Chen
{"title":"单晶体管PZT/Al/sub 2/O/sub 3/， SBT/Al/sub 2/O/sub 3/和BLT/Al/sub 2/O/sub 3/堆叠栅存储器","authors":"M.Y. Yang, S.B. Chen, A. Chin, C. Sun, B. Lan, S. Chen","doi":"10.1109/IEDM.2001.979634","DOIUrl":null,"url":null,"abstract":"We have compared the memory performance of one-transistor ferroelectric MOSFET (FeMOSFET) with stacked Pb(Zr,Ti)O/sub 3/ (PZT), SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT), and Bi/sub 3.75/La/sub 0.25/Ti/sub 3/O/sub 12/ (BLT)/40 /spl Aring/-Al/sub 2/O/sub 3/ gate dielectrics. The SBT/Al/sub 2/O/sub 3/ FeMOSFET has the largest I/sub ON//I/sub OFF/ of greater than 2 orders of magnitude, and the PZT/Al/sub 2/O/sub 3/ FeMOSFET has the fast 10 ns program/erase time, >10/sup 11/ program/erase endurance, and 10 years retention.","PeriodicalId":13825,"journal":{"name":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","volume":"42 1","pages":"36.3.1-36.3.4"},"PeriodicalIF":0.0000,"publicationDate":"2001-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"One-transistor PZT/Al/sub 2/O/sub 3/, SBT/Al/sub 2/O/sub 3/ and BLT/Al/sub 2/O/sub 3/ stacked gate memory\",\"authors\":\"M.Y. Yang, S.B. Chen, A. Chin, C. Sun, B. Lan, S. Chen\",\"doi\":\"10.1109/IEDM.2001.979634\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have compared the memory performance of one-transistor ferroelectric MOSFET (FeMOSFET) with stacked Pb(Zr,Ti)O/sub 3/ (PZT), SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT), and Bi/sub 3.75/La/sub 0.25/Ti/sub 3/O/sub 12/ (BLT)/40 /spl Aring/-Al/sub 2/O/sub 3/ gate dielectrics. The SBT/Al/sub 2/O/sub 3/ FeMOSFET has the largest I/sub ON//I/sub OFF/ of greater than 2 orders of magnitude, and the PZT/Al/sub 2/O/sub 3/ FeMOSFET has the fast 10 ns program/erase time, >10/sup 11/ program/erase endurance, and 10 years retention.\",\"PeriodicalId\":13825,\"journal\":{\"name\":\"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)\",\"volume\":\"42 1\",\"pages\":\"36.3.1-36.3.4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-12-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2001.979634\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2001.979634","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We have compared the memory performance of one-transistor ferroelectric MOSFET (FeMOSFET) with stacked Pb(Zr,Ti)O/sub 3/ (PZT), SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT), and Bi/sub 3.75/La/sub 0.25/Ti/sub 3/O/sub 12/ (BLT)/40 /spl Aring/-Al/sub 2/O/sub 3/ gate dielectrics. The SBT/Al/sub 2/O/sub 3/ FeMOSFET has the largest I/sub ON//I/sub OFF/ of greater than 2 orders of magnitude, and the PZT/Al/sub 2/O/sub 3/ FeMOSFET has the fast 10 ns program/erase time, >10/sup 11/ program/erase endurance, and 10 years retention.
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