从5G到6G:化合物半导体会产生影响吗?

N. Collaert, A. Alian, A. Banerjee, Vikas Chauhan, R. ElKashlan, B. Hsu, M. Ingels, A. Khaled, K. Vondkar Kodandarama, B. Kunert, Y. Mols, U. Peralagu, V. Putcha, R. Rodriguez, A. Sibaja-Hernandez, E. Simoen, A. Vais, A. Walke, L. Witters, S. Yadav, H. Yu, M. Zhao, P. Wambacq, B. Parvais, N. Waldron
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引用次数: 5

摘要

在这项工作中,我们将解决III-V/CMOS混合技术用于下一代无线通信的机会,超越5G,移动到100GHz以上的工作频率。将讨论与III-V级升级和使用3D技术的CMOS协整相关的挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
From 5G to 6G: will compound semiconductors make the difference?
In this work, we will address the opportunities of a hybrid III-V/CMOS technology for next generation wireless communication, beyond 5G, moving to operating frequencies above 100GHz. Challenges related to III-V upscaling and CMOS co-integration using 3D technologies will be discussed.
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