{"title":"EBL带隙对p-n均结硅太阳电池效率的影响","authors":"Md. Feroz Ali, Md. Faruk Hossain","doi":"10.1109/CEEE.2015.7428268","DOIUrl":null,"url":null,"abstract":"In this work, p-n homojunction Silicon solar cell with Electron Blocking Layer (EBL) on the top of the surface has been simulated and investigated by using Analysis of Microelectronic and Photonic Structures (AMPS-1D) simulator in respect to overall performance. By changing the thickness of the p-layer and n-layer Si and bandgap of the EBL the optimum performance and efficiency has been investigated. After completing the simulation all data from AMPS-1D has been transfer to the gragh.exe (graph plotting software) software to plot most of the graph in this paper. At the thickness of 6000 nm of each p-layer and n-layer Si and 50 nm of EBL with 2.10 eV bandgap the efficiency of 26.285% has been investigated and this type of solar cell has been proposed in this paper.","PeriodicalId":6490,"journal":{"name":"2015 International Conference on Electrical & Electronic Engineering (ICEEE)","volume":"61 1","pages":"245-248"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Effect of bandgap of EBL on efficiency of the p-n homojunction Si solar cell from numerical analysis\",\"authors\":\"Md. Feroz Ali, Md. Faruk Hossain\",\"doi\":\"10.1109/CEEE.2015.7428268\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, p-n homojunction Silicon solar cell with Electron Blocking Layer (EBL) on the top of the surface has been simulated and investigated by using Analysis of Microelectronic and Photonic Structures (AMPS-1D) simulator in respect to overall performance. By changing the thickness of the p-layer and n-layer Si and bandgap of the EBL the optimum performance and efficiency has been investigated. After completing the simulation all data from AMPS-1D has been transfer to the gragh.exe (graph plotting software) software to plot most of the graph in this paper. At the thickness of 6000 nm of each p-layer and n-layer Si and 50 nm of EBL with 2.10 eV bandgap the efficiency of 26.285% has been investigated and this type of solar cell has been proposed in this paper.\",\"PeriodicalId\":6490,\"journal\":{\"name\":\"2015 International Conference on Electrical & Electronic Engineering (ICEEE)\",\"volume\":\"61 1\",\"pages\":\"245-248\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Conference on Electrical & Electronic Engineering (ICEEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CEEE.2015.7428268\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Conference on Electrical & Electronic Engineering (ICEEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CEEE.2015.7428268","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of bandgap of EBL on efficiency of the p-n homojunction Si solar cell from numerical analysis
In this work, p-n homojunction Silicon solar cell with Electron Blocking Layer (EBL) on the top of the surface has been simulated and investigated by using Analysis of Microelectronic and Photonic Structures (AMPS-1D) simulator in respect to overall performance. By changing the thickness of the p-layer and n-layer Si and bandgap of the EBL the optimum performance and efficiency has been investigated. After completing the simulation all data from AMPS-1D has been transfer to the gragh.exe (graph plotting software) software to plot most of the graph in this paper. At the thickness of 6000 nm of each p-layer and n-layer Si and 50 nm of EBL with 2.10 eV bandgap the efficiency of 26.285% has been investigated and this type of solar cell has been proposed in this paper.
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