Bruce B. Doris, M. Ieong, T. Kanarsky, Ying Zhang, R. Roy, O. Dokumaci, Z. Ren, F. Jamin, L. Shi, W. Natzle, Hsiang-Jen Huang, J. Mezzapelle, A. Mocuta, S. Womack, Michael A. Gribelyuk, E. C. Jones, R. J. Miller, Hon-Sum Philip Wong, Wilfried Haensch
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Extreme scaling with ultra-thin Si channel MOSFETs
We examine the scaling limits for planar single gate technology using the ultra-thin Si channel MOSFET. Characteristics for extreme scaled devices with physical gate lengths down to 6 nm and SOI channels as thin as 4 nm are presented. For the first time, we report ring oscillators with 26 nm gate lengths and ultra-thin Si channels.
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