一种适用于MOSFET紧凑型栅漏电流的通用划分方案

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Pub Date : 2001-12-02 DOI:10.1109/IEDM.2001.979487

W. Shih, R. Rios, P. Packan, K. Mistry, T. Abbott

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引用次数: 28

摘要

首次严谨地证明了MOSFET栅极漏电流的源极/漏极分布与反转电荷的源极/漏极分布相同。本文为模型开发人员提供了解决分割问题的通用方法，并为亚100纳米技术的mosfet提供了更一致的模型参数提取方法。

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A general partition scheme for gate leakage current suitable for MOSFET compact models

For the first time, it is rigorously shown that the source/drain partition of gate leakage current in a MOSFET is identical to that of inversion charge. This paper provides model developers a general recipe in addressing the partition issue and enables more consistent model parameter extraction methodology for MOSFETs in sub-100 nm technology.

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International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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