199-MHz多晶硅微机械磁盘阵列复合振荡器

Qianyi Xie, S. Afshar, A. Ozgurluk, C. Nguyen
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引用次数: 4

摘要

使用由六个$13.4-\mu \mathrm{m}$半径电容隙转导径向轮廓模式多晶硅微机械圆盘谐振器组成的应力缓冲阵列复合材料,电极与谐振器之间的间隙为36.1 nm,使皮尔斯振荡器的中心为199.2 MHz,在1 khz偏移时相位噪声标记为- 104.7dBc/Hz,远离载波时为- 149.6dBc/Hz,足以用于智能手机。12 khz至20 mhz的集成抖动为163.3fs,产生−251dB的出色抖动FoM。该演示的关键是使用$\lambda$耦合器来影响阵列终端上的0°相移;而无电极谐振器则可以缓冲制造后的应力效应,否则在间隙很小的情况下,可能会导致圆盘与电极之间的短路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
199-MHz Polysilicon Micromechanical Disk Array-Composite Oscillator
The use of a stress-buffered array-composite of six $13.4-\mu \mathrm{m}$ radius capacitive-gap transduced radial-contour mode polysilicon micromechanical disk resonators with 36.1-nm electrode-to-resonator gaps has enabled a Pierce oscillator centered at 199.2 MHz with phase noise marks of −104.7dBc/Hz at 1-kHz offset and −149.6dBc/Hz far from the carrier, sufficient for smartphones. The 12-kHz to 20-MHz integrated jitter is 163.3fs, which yields an excellent jitter FoM of −251dB. The key to this demonstration is the use of $\lambda$ couplers to affect a 0° phase shift across the array terminals; and electrodeless resonators to buffer the effect of post-fabrication stress that otherwise might short disks to their electrodes when gaps are very small.
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