B. Ouattara, L. Doyen, D. Ney, H. Mehrez, P. Bazargan-Sabet, F. Bana
{"title":"电网设计中电迁移寿命评估的冗余方法","authors":"B. Ouattara, L. Doyen, D. Ney, H. Mehrez, P. Bazargan-Sabet, F. Bana","doi":"10.1109/IITC.2013.6615570","DOIUrl":null,"url":null,"abstract":"The tendency of semiconductor market to increase component density in small chip leads to reliability issues such as Electromigration (EM). This phenomenon becomes critical in deep submicron design technology. In this paper we assess chip power grid lifetimes by taking into account redundant paths contribution in case of EM degradation. The application of this method for wire lifetime validation of a 32nm microprocessor has reduced significantly wires susceptible to EM given by simulation tools.","PeriodicalId":6377,"journal":{"name":"2013 IEEE International Interconnect Technology Conference - IITC","volume":"239 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Redundancy method to assess electromigration lifetime in power Grid design\",\"authors\":\"B. Ouattara, L. Doyen, D. Ney, H. Mehrez, P. Bazargan-Sabet, F. Bana\",\"doi\":\"10.1109/IITC.2013.6615570\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The tendency of semiconductor market to increase component density in small chip leads to reliability issues such as Electromigration (EM). This phenomenon becomes critical in deep submicron design technology. In this paper we assess chip power grid lifetimes by taking into account redundant paths contribution in case of EM degradation. The application of this method for wire lifetime validation of a 32nm microprocessor has reduced significantly wires susceptible to EM given by simulation tools.\",\"PeriodicalId\":6377,\"journal\":{\"name\":\"2013 IEEE International Interconnect Technology Conference - IITC\",\"volume\":\"239 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Interconnect Technology Conference - IITC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2013.6615570\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Interconnect Technology Conference - IITC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2013.6615570","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Redundancy method to assess electromigration lifetime in power Grid design
The tendency of semiconductor market to increase component density in small chip leads to reliability issues such as Electromigration (EM). This phenomenon becomes critical in deep submicron design technology. In this paper we assess chip power grid lifetimes by taking into account redundant paths contribution in case of EM degradation. The application of this method for wire lifetime validation of a 32nm microprocessor has reduced significantly wires susceptible to EM given by simulation tools.